CY7C1021CV33-10ZSXA

Product Overview

Category

The CY7C1021CV33-10ZSXA belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed performance
• Low power consumption
• Non-volatile memory
• Reliable and durable

Package

The CY7C1021CV33-10ZSXA is available in a compact surface-mount package.

Essence

This product is an essential component for storing and accessing digital information in various electronic devices.

Packaging/Quantity

The CY7C1021CV33-10ZSXA is typically packaged in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Model: CY7C1021CV33-10ZSXA
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1 Megabit x 1 bit
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

The CY7C1021CV33-10ZSXA has a standard pin configuration as follows:

Pin 1: Chip Enable (CE) Pin 2: Output Enable (OE) Pin 3: Write Enable (WE) Pin 4-11: Address Inputs (A0-A7) Pin 12-19: Data Inputs/Outputs (DQ0-DQ7) Pin 20: Power Supply (Vcc) Pin 21: Ground (GND)

Functional Features

• Fast access time allows for efficient data retrieval.
• Low power consumption ensures energy efficiency.
• Non-volatile memory retains data even when power is disconnected.
• Reliable performance ensures data integrity.
• Compact package size enables space-saving designs.

Advantages and Disadvantages

Advantages

• High-speed performance enhances overall system efficiency.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory eliminates the need for constant data backup.
• Reliable operation reduces the risk of data loss or corruption.
• Compact package size facilitates integration into various electronic systems.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to some alternative models.
• Sensitivity to environmental factors such as temperature and voltage fluctuations.

Working Principles

The CY7C1021CV33-10ZSXA utilizes static random access memory technology, which stores data in a volatile manner. It consists of an array of memory cells that can be accessed individually using address inputs. The chip enable (CE), output enable (OE), and write enable (WE) pins control the read and write operations. When powered, the memory cells retain their stored data until explicitly modified.

Detailed Application Field Plans

The CY7C1021CV33-10ZSXA finds applications in various electronic systems, including but not limited to:

1. Computer motherboards
2. Networking equipment
3. Industrial automation systems
4. Automotive electronics
5. Consumer electronics

In these applications, it serves as a reliable and high-speed memory solution for storing critical data and facilitating efficient data processing.

Detailed and Complete Alternative Models

1. CY7C1021CV33-15ZSXA: Similar to the CY7C1021CV33-10ZSXA, but with a slightly slower access time of 15 nanoseconds.
2. CY7C1021CV33-20ZSXA: Similar to the CY7C1021CV33-10ZSXA, but with a slower access time of 20 nanoseconds.
3. CY7C1021CV33-25ZSXA: Similar to the CY7C1021CV33-10ZSXA, but with a slower access time of 25 nanoseconds.

These alternative models provide flexibility in choosing the appropriate access time for specific application requirements.

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