CY7C1061G18-15BV1XI

Overview

Category: Integrated Circuit (IC)

Use: Memory chip

Characteristics: - High-speed synchronous dynamic random-access memory (SDRAM) - Low power consumption - Large storage capacity - Fast data transfer rate

Package: BGA (Ball Grid Array)

Essence: The CY7C1061G18-15BV1XI is a high-performance memory chip designed for various electronic devices that require fast and reliable data storage and retrieval.

Packaging/Quantity: Typically sold in reels or trays, with quantities varying depending on the manufacturer's specifications.

Specifications

• Part Number: CY7C1061G18-15BV1XI
• Memory Type: SDRAM
• Density: 1 Gb (Gigabit)
• Organization: 128M words x 8 bits
• Operating Voltage: 1.7V - 1.9V
• Clock Frequency: 150 MHz
• Access Time: 5.4 ns
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Pin Configuration

The CY7C1061G18-15BV1XI has a total of 165 pins. The pin configuration is as follows:

Functional Features

• High-speed data transfer with low latency
• Burst mode operation for efficient data access
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving
• Internal pipelined architecture for continuous data flow

Advantages

• High performance and reliability
• Low power consumption
• Large storage capacity
• Fast data transfer rate
• Suitable for various electronic devices and applications

Disadvantages

• Relatively higher cost compared to other memory options
• Requires proper handling and static precautions during installation

Working Principles

The CY7C1061G18-15BV1XI operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The memory cells are organized into rows and columns, allowing for efficient addressing and retrieval of data.

During operation, the chip synchronizes its internal clock with the system's clock signal to ensure accurate data transfer. The memory controller sends commands and addresses to access specific memory locations, and the data is read from or written to the corresponding cells.

Detailed Application Field Plans

The CY7C1061G18-15BV1XI is widely used in various electronic devices and systems that require high-speed and reliable data storage, such as:

1. Computer systems (desktops, laptops, servers)
2. Networking equipment (routers, switches)
3. Telecommunications devices
4. Consumer electronics (smartphones, tablets, gaming consoles)
5. Automotive electronics
6. Industrial automation systems
7. Medical devices

Alternative Models

Here are some alternative models that offer similar functionality and can be considered as alternatives to the CY7C1061G18-15BV1XI:

1. MT41K128M16JT-125: 1 Gb DDR3 SDRAM, 128M words x 16 bits, 1.5V, 800 MHz.
2. K4B1G1646G-BCH9: 1 Gb DDR4 SDRAM, 128M words x 16 bits, 1.2V, 2133 MHz.
3. IS42S16160D-7TLI: 1 Gb SDRAM, 128M words x 16 bits, 3.3V, 143 MHz.

These alternative models offer similar memory capacities and performance characteristics, but may have different package types or voltage requirements.

In conclusion, the CY7C1061G18-15BV1XI is a high-performance memory chip suitable for various electronic devices and systems that require fast and reliable data storage. Its advanced features and specifications make it an ideal choice for applications where high-speed data transfer and low power consumption are crucial.