The CY7C1315BV18-200BZI belongs to the category of high-speed synchronous SRAM (Static Random Access Memory) chips.
This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.
The CY7C1315BV18-200BZI is available in a compact BGA (Ball Grid Array) package. Each package contains one unit of the SRAM chip.
The CY7C1315BV18-200BZI features a total of 165 pins, each serving a specific function. The pin configuration is as follows:
(Pin Number) - (Pin Name) - (Function) 1 - VDDQ - Power Supply 2 - VSSQ - Ground 3 - NC - No Connection 4 - A0-A17 - Address Inputs 5 - DQ0-DQ17 - Data Inputs/Outputs 6 - WE# - Write Enable 7 - OE# - Output Enable 8 - CE# - Chip Enable 9 - UB#, LB# - Byte Enables 10 - CLK - Clock Input 11-165 - NC - No Connection
Note: "NC" denotes pins that are not connected or have no assigned function.
The CY7C1315BV18-200BZI offers several functional features that enhance its performance and usability:
The CY7C1315BV18-200BZI operates based on the principles of synchronous static random access memory. It stores data in a matrix of memory cells, organized as rows and columns. The address inputs specify the location of the desired data, which is then read or written through the data input/output pins. The clock signal synchronizes the operations, ensuring accurate and efficient data transfer.
The CY7C1315BV18-200BZI finds applications in various fields that require high-speed and reliable data storage. Some potential application areas include:
Question: What is the CY7C1315BV18-200BZI?
Answer: The CY7C1315BV18-200BZI is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Cypress Semiconductor.
Question: What is the capacity of the CY7C1315BV18-200BZI?
Answer: The CY7C1315BV18-200BZI has a capacity of 1,048,576 bits or 128 kilobytes.
Question: What is the operating voltage range for the CY7C1315BV18-200BZI?
Answer: The operating voltage range for this SRAM is typically between 1.65V and 2.2V.
Question: What is the access time of the CY7C1315BV18-200BZI?
Answer: The access time of this SRAM is 10 ns, meaning it takes approximately 10 nanoseconds to read or write data.
Question: Can the CY7C1315BV18-200BZI be used in industrial applications?
Answer: Yes, this SRAM is designed for industrial temperature ranges (-40°C to +85°C) and can be used in various industrial applications.
Question: Does the CY7C1315BV18-200BZI support multiple chip enable signals?
Answer: Yes, this SRAM supports two chip enable signals (CE1 and CE2), allowing for more flexible control in system designs.
Question: What is the package type of the CY7C1315BV18-200BZI?
Answer: The CY7C1315BV18-200BZI comes in a 165-ball BGA (Ball Grid Array) package.
Question: Can the CY7C1315BV18-200BZI operate at higher frequencies?
Answer: Yes, this SRAM can operate at frequencies up to 200 MHz, making it suitable for high-speed applications.
Question: Is the CY7C1315BV18-200BZI compatible with different microcontrollers or processors?
Answer: Yes, this SRAM is designed to be compatible with a wide range of microcontrollers and processors that support synchronous SRAM interfaces.
Question: Are there any specific design considerations when using the CY7C1315BV18-200BZI?
Answer: It is important to ensure proper power supply decoupling and signal integrity in the system design to maximize the performance of the CY7C1315BV18-200BZI. Additionally, the datasheet provided by Cypress Semiconductor should be consulted for detailed design guidelines and recommendations.