CY7C1346H-166AXCT

Product Overview

Category

The CY7C1346H-166AXCT belongs to the category of high-speed synchronous static random access memory (SRAM) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High-speed operation: The CY7C1346H-166AXCT offers rapid data access times, allowing for efficient processing of information.
• Large storage capacity: This SRAM chip provides a generous amount of memory space, enabling the storage of substantial amounts of data.
• Low power consumption: The device is designed to consume minimal power, making it suitable for battery-powered applications.
• Robust performance: The CY7C1346H-166AXCT exhibits excellent stability and reliability, ensuring consistent operation even under demanding conditions.

Package

The CY7C1346H-166AXCT is available in a compact and industry-standard 48-pin TSOP-II package. This package type facilitates easy integration into circuit boards and ensures compatibility with existing designs.

Essence

The essence of the CY7C1346H-166AXCT lies in its ability to provide high-speed and reliable data storage, making it an essential component in modern electronic systems.

Packaging/Quantity

This product is typically supplied in reels or trays, depending on the manufacturer's packaging standards. The quantity per reel or tray may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Synchronous SRAM
• Organization: 4 Meg x 16 bits
• Access Time: 166 MHz
• Voltage Supply: 3.3V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years

Detailed Pin Configuration

The CY7C1346H-166AXCT features a 48-pin TSOP-II package with the following pin configuration:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. VDDQ
12. DQ8
13. DQ9
14. DQ10
15. DQ11
16. DQ12
17. DQ13
18. DQ14
19. DQ15
20. VSSQ
21. VDDQ
22. A0
23. A1
24. A2
25. A3
26. A4
27. A5
28. A6
29. A7
30. VSSQ
31. VDDQ
32. A8
33. A9
34. A10
35. A11
36. A12
37. A13
38. A14
39. A15
40. VSSQ
41. VDDQ
42. CLK
43. /OE
44. /WE
45. /LB
46. /UB
47. /CE
48. VSSQ

Functional Features

The CY7C1346H-166AXCT offers the following functional features:

• Synchronous operation: The chip synchronizes data transfers with an external clock signal, ensuring reliable and accurate communication.
• Burst mode support: It supports burst read and write operations, allowing for efficient data transfer between the memory and the host system.
• Byte write capability: The device enables individual byte write operations, providing flexibility in data manipulation.
• Automatic power-down: It features a power-down mode that reduces power consumption when the memory is not actively accessed, contributing to energy efficiency.

Advantages and Disadvantages

Advantages

• High-speed operation facilitates rapid data access and processing.
• Large storage capacity accommodates substantial amounts of data.
• Low power consumption makes it suitable for battery-powered applications.
• Robust performance ensures reliable operation under demanding conditions.
• Synchronous operation allows for accurate data transfers.

Disadvantages

• Limited compatibility with certain legacy systems that require different memory types.
• Relatively higher cost compared to other memory technologies.

Working Principles

The CY7C1346H-166AXCT operates based on the principles of synchronous SRAM. It utilizes an external clock signal to synchronize data transfers between the memory and the host system. When a read or write operation is initiated, the chip accesses the requested data from its internal memory cells and transfers it to or from the host system. The synchronous nature of the device ensures reliable and accurate communication.

Detailed Application Field Plans

The CY7