CYDMX256A16-90BVXI

Product Overview

Category

CYDMX256A16-90BVXI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Large storage capacity
• Non-volatile memory
• Low power consumption

Package

CYDMX256A16-90BVXI is available in a compact integrated circuit (IC) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of CYDMX256A16-90BVXI lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

CYDMX256A16-90BVXI is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Model: CYDMX256A16-90BVXI
• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 256 megabits (32 megabytes)
• Operating Voltage: 3.3V
• Speed: 90 nanoseconds (ns)
• Interface: Parallel
• Package Type: Integrated Circuit (IC)

Detailed Pin Configuration

The pin configuration of CYDMX256A16-90BVXI is as follows:

1. VDD - Power supply voltage
2. DQ0-DQ15 - Data input/output pins
3. A0-A17 - Address input pins
4. WE - Write enable pin
5. OE - Output enable pin
6. CAS - Column address strobe pin
7. RAS - Row address strobe pin
8. CLK - Clock input pin
9. CKE - Clock enable pin
10. NC - No connection

Functional Features

• High-speed data access
• Random access capability
• Refresh mechanism for maintaining data integrity
• Low power consumption in standby mode
• Error correction capabilities

Advantages and Disadvantages

Advantages

• Fast data access speed
• Large storage capacity
• Low power consumption
• Error correction capabilities ensure data reliability

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance due to the nature of DRAM technology
• Requires periodic refresh cycles to maintain data integrity

Working Principles

CYDMX256A16-90BVXI operates based on the principles of dynamic random access memory (DRAM). It stores digital information as electrical charges in tiny capacitors within the memory cells. The stored charge needs to be periodically refreshed to prevent data loss.

When a read or write operation is initiated, the appropriate address is provided to access the desired memory location. The data is then transferred between the memory cells and the input/output pins using the row and column address strobe signals.

Detailed Application Field Plans

CYDMX256A16-90BVXI finds applications in various electronic devices and systems, including: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Gaming consoles - Automotive electronics - Industrial control systems - Medical equipment

Detailed and Complete Alternative Models

Some alternative models to CYDMX256A16-90BVXI include: - CYDMX512A32-80BVXI - CYDMX128A8-100BVXI - CYDMX1G16-70BVXI - CYDMX64A4-120BVXI

These alternative models offer different capacities, speeds, and voltage requirements, allowing users to choose the most suitable option for their specific application.

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