S29AL016J55TFI020

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Large storage capacity
• Package: TFBGA (Thin Fine-Pitch Ball Grid Array)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Memory Capacity: 16 Megabits (2 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 55 ns
• Erase/Program Time: 20 µs per sector
• Data Retention: Minimum 20 years

Detailed Pin Configuration

The S29AL016J55TFI020 flash memory chip has the following pin configuration:

1. VCC - Power Supply
2. A0-A18 - Address Inputs
3. DQ0-DQ15 - Data Inputs/Outputs
4. WE# - Write Enable
5. CE# - Chip Enable
6. OE# - Output Enable
7. RP# - Ready/Busy Status
8. RESET# - Reset Input
9. WP# - Write Protect
10. RY/BY# - Ready/Busy Output

Functional Features

• High-speed read and write operations enable quick data access.
• Non-volatile memory ensures data retention even when power is disconnected.
• Low power consumption makes it suitable for battery-powered devices.
• Large storage capacity allows for storing significant amounts of data.
• Compatibility with parallel interface simplifies integration into existing systems.

Advantages and Disadvantages

Advantages: - Fast access times enhance overall system performance. - Reliable data retention ensures long-term storage without loss. - Low power consumption extends battery life in portable devices. - Ample storage capacity accommodates diverse application needs.

Disadvantages: - Parallel interface may limit compatibility with newer systems using serial interfaces. - Higher cost compared to lower-capacity flash memory options. - Limited erase/program cycles may require careful management in write-intensive applications.

Working Principles

The S29AL016J55TFI020 flash memory utilizes a floating-gate transistor technology. It stores data by trapping electrons in the floating gate, which alters the transistor's conductive properties. When reading data, the stored charge is measured, allowing retrieval of the stored information. During programming or erasing, high voltages are applied to modify the trapped charge, enabling data modification or deletion.

Detailed Application Field Plans

The S29AL016J55TFI020 flash memory chip finds applications in various electronic devices, including but not limited to:

1. Mobile phones
2. Digital cameras
3. Portable media players
4. Automotive electronics
5. Industrial control systems

Its reliable data storage capabilities make it suitable for applications requiring frequent data read/write operations and long-term data retention.

Detailed and Complete Alternative Models

1. S29GL064N90TFI010 - 64 Megabit (8 Megabyte) parallel flash memory
2. S25FL128SAGMFI001 - 128 Megabit (16 Megabyte) serial flash memory
3. S34ML02G200BHI000 - 2 Gigabit (256 Megabyte) parallel flash memory

These alternative models offer different capacities and interfaces to cater to specific application requirements.

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