S29GL032N11FFI020

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Integrated Circuit (IC)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Memory Type: NOR Flash
• Capacity: 32 Megabits (4 Megabytes)
• Organization: 2,097,152 words x 16 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 90 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Sector Architecture: Uniform 64 Kbyte sectors with 4 Kbyte sub-sectors
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The S29GL032N11FFI020 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. OE#
45. BYTE#
46. RY/BY#
47. RESET#
48. GND

Functional Features

• High-speed read and write operations for efficient data access
• Sector-based erase and program operations for flexible data management
• Suspend and resume functionality for erase and program operations
• Reliable data retention for long-term storage
• Low power consumption for energy efficiency

Advantages

• Large storage capacity allows for storing a significant amount of data
• High-speed operations enable quick data retrieval and storage
• Suspend and resume functionality provides flexibility in managing erase and program operations
• Reliable data retention ensures the integrity of stored information
• Low power consumption contributes to energy-efficient device operation

Disadvantages

• Parallel interface may limit compatibility with certain devices or systems
• Limited storage capacity compared to newer flash memory technologies

Working Principles

The S29GL032N11FFI020 is based on NOR flash memory technology. It utilizes a grid of memory cells, each capable of storing one bit of information. The memory cells are organized into sectors, allowing for efficient erasure and programming operations. When data is written to the memory, it is stored by changing the electrical charge of the memory cells. Reading the data involves detecting the charge state of the cells.

Detailed Application Field Plans

The S29GL032N11FFI020 can be used in various electronic devices that require reliable and high-speed data storage. Some potential application fields include: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Networking equipment

Detailed and Complete Alternative Models

• S29GL064N11FFI020: 64 Megabit (8 Megabyte) capacity variant of the same flash memory series.
• S29GL016D90TFI010: 16 Megabit (2 Megabyte) capacity variant with different specifications.

Note: The alternative models mentioned above are just a few examples, and there may be other alternatives available in the market.

This entry provides an overview of the S29GL032N11FFI020 flash memory, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.