S29GL128P90TFIR10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Reliable and durable
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a compact and efficient manner
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Model: S29GL128P90TFIR10
• Memory Type: NOR Flash
• Capacity: 128 Megabits (16 Megabytes)
• Operating Voltage: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Interface: Parallel
• Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The S29GL128P90TFIR10 has a total of 56 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A20: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/BYTE#: Reset/Byte# control
8. RY/BY#: Ready/Busy# status output
9. WP#/ACC: Write protect/Acceleration control
10. VSS: Ground

(Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete pinout diagram.)

Functional Features

• High-speed data transfer: The S29GL128P90TFIR10 offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Reliable operation: This flash memory device is designed to withstand harsh environmental conditions and has built-in error correction mechanisms to ensure data integrity.
• Low power consumption: The S29GL128P90TFIR10 is optimized for low power usage, making it suitable for battery-powered devices.
• Easy integration: The parallel interface simplifies the integration of this flash memory into various electronic systems.

Advantages and Disadvantages

Advantages: - High-density storage capacity - Fast read and write speeds - Reliable and durable - Low power consumption

Disadvantages: - Limited capacity compared to other flash memory options - Parallel interface may require additional circuitry for compatibility with certain systems

Working Principles

The S29GL128P90TFIR10 utilizes NOR flash memory technology. It stores digital information by trapping electrons in a floating gate within each memory cell. When reading data, the stored charge is measured to determine the binary value. During writing, a high voltage is applied to the control gates to enable or disable the flow of electrons, altering the stored charge.

Detailed Application Field Plans

The S29GL128P90TFIR10 is widely used in various electronic devices that require non-volatile data storage, such as: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics (e.g., digital cameras, set-top boxes)

Detailed and Complete Alternative Models

1. S29GL064P90TFIR20: 64 Megabit (8 Megabyte) capacity, 90 nanoseconds access time, parallel interface.
2. S29GL256P90TFIR30: 256 Megabit (32 Megabyte) capacity, 90 nanoseconds access time, parallel interface.
3. S29GL512P90TFIR40: 512 Megabit (64 Megabyte) capacity, 90 nanoseconds access time, parallel interface.

(Note: These alternative models are provided as examples. Please refer to the manufacturer's website or datasheet for a comprehensive list of alternative models.)

In conclusion, the S29GL128P90TFIR10 is a high-performance flash memory device that offers reliable data storage and retrieval capabilities. Its fast read and write speeds, along with its durability, make it suitable for various applications in different industries.