S29GL256S90FHI020

Product Overview

Category

The S29GL256S90FHI020 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The S29GL256S90FHI020 offers a storage capacity of 256 gigabits (32 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a high-speed interface, this flash memory device enables quick read and write operations, ensuring efficient data handling.
• Reliable performance: The S29GL256S90FHI020 is designed to provide reliable and consistent performance, making it suitable for critical applications.
• Low power consumption: This flash memory device is engineered to consume minimal power, contributing to extended battery life in portable devices.

Package

The S29GL256S90FHI020 is available in a compact and durable package, which ensures protection against physical damage and environmental factors. The package is designed to be compatible with standard surface mount technology (SMT) assembly processes.

Essence

The essence of the S29GL256S90FHI020 lies in its ability to provide high-capacity and reliable data storage in a compact form factor, catering to the needs of modern electronic devices.

Packaging/Quantity

This flash memory device is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Memory Type: NAND Flash
• Storage Capacity: 256 gigabits (32 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

The S29GL256S90FHI020 features a 48-pin configuration, with each pin serving a specific function. The detailed pin configuration is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable control
5. CE# - Chip enable control
6. OE# - Output enable control
7. RE# - Read enable control
8. RP# - Ready/Busy status
9. RY/BY# - Ready/Busy output
10. WP#/ACC - Write protect or accelerated programming control
11. RESET# - Reset control
12. BYTE# - Byte enable control
13. VSS - Ground

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Functional Features

The S29GL256S90FHI020 offers several functional features that enhance its performance and usability:

1. High-speed data transfer: This flash memory device supports fast read and write operations, enabling quick access to stored data.
2. Block erase capability: It allows for efficient erasure of large memory blocks, facilitating faster data updates and management.
3. Error correction code (ECC): The S29GL256S90FHI020 incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
4. Wear leveling: This feature evenly distributes write operations across the memory cells, extending the lifespan of the flash memory device.
5. Security features: The S29GL256S90FHI020 includes security measures like password protection and data encryption to safeguard sensitive information.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Block erase capability
• Error correction code (ECC)
• Wear leveling
• Security features

Disadvantages

• Higher cost compared to lower-capacity flash memory devices
• Limited compatibility with certain legacy systems

Working Principles

The S29GL256S90FHI020 operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges represent the binary values of the stored data.

During read operations, the charges are measured to determine the stored data. For write operations, the charges are either added or removed from the floating gate to modify the stored data. Erase operations involve removing all charges from a memory block, effectively resetting it for new data storage.

Detailed Application Field Plans

The S29GL256S90FHI020 finds applications in various fields that require high-capacity and reliable data storage. Some detailed application field plans include:

1. Mobile Devices: Smartphones, tablets, and portable media players benefit from the large storage