S34MS02G204BHI010

Product Overview

Category

S34MS02G204BHI010 belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and digital cameras.

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Reliable data retention
• Compact package size

Package

S34MS02G204BHI010 is available in a small form factor package, which makes it suitable for integration into various electronic devices.

Essence

The essence of S34MS02G204BHI010 lies in its ability to store and retrieve large amounts of data quickly and reliably.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 2 gigabits (256 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 50 megabits per second (Mbps)
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. HOLD: Suspends ongoing operations
4. WP: Write protect
5. SCK: Serial clock input
6. SI: Serial data input
7. SO: Serial data output
8. CS: Chip select

Functional Features

• Page Program: Allows data to be written in page-sized increments
• Sector Erase: Enables erasing of data at the sector level
• Block Erase: Allows erasing of larger data blocks
• Chip Erase: Clears the entire memory array
• Read Operation: Retrieves stored data from the memory

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage
• Fast read and write speeds enhance overall system performance
• Low power consumption helps conserve battery life in portable devices
• Reliable data retention ensures long-term data integrity
• Compact package size enables integration into space-constrained designs

Disadvantages

• Limited erase/program cycles may restrict the lifespan of the device
• Higher cost compared to some other memory technologies
• Requires a dedicated interface (SPI) for communication

Working Principles

S34MS02G204BHI010 utilizes flash memory technology, which is based on the principle of storing electrical charges in floating gate transistors. These charges represent binary data (0s and 1s). The memory cells are organized into sectors and blocks, allowing for efficient data storage and retrieval.

During programming, an electric charge is applied to the floating gate, altering its threshold voltage and storing the desired data. Erasing is achieved by removing the charge from the floating gate, resetting it to its initial state.

Detailed Application Field Plans

S34MS02G204BHI010 finds applications in various electronic devices, including: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Networking equipment - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. S34MS01G204BHI010: 1 gigabit (128 megabytes) storage capacity
2. S34MS04G204BHI010: 4 gigabits (512 megabytes) storage capacity
3. S34MS08G204BHI010: 8 gigabits (1 gigabyte) storage capacity
4. S34MS16G204BHI010: 16 gigabits (2 gigabytes) storage capacity

These alternative models offer varying storage capacities to cater to different application requirements.

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