71V321S55PFI

Product Overview

Category

The 71V321S55PFI belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High storage capacity
• Fast access times
• Non-volatile memory
• Low power consumption

Package

The 71V321S55PFI is available in a compact integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide reliable and efficient data storage solutions for various electronic applications.

Packaging/Quantity

The 71V321S55PFI is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Memory Size: 32 Megabits (4 Megabytes)
• Organization: 2M x 16 bits
• Supply Voltage: 3.3V
• Access Time: 55 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: Plastic Fine-Pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The 71V321S55PFI has a total of 48 pins, which are assigned specific functions as follows:

1. VDDQ - Power supply voltage (3.3V)
2. VSSQ - Ground
3. A0-A20 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE# - Write Enable
6. OE# - Output Enable
7. CE# - Chip Enable
8. UB#, LB# - Upper Byte and Lower Byte control signals
9. CLK - Clock input
10. NC - No Connection

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

• High-speed data access
• Low power consumption in standby mode
• Easy integration into existing electronic systems
• Reliable data retention even in harsh environments
• Compatibility with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Fast access times enable efficient data processing
• Non-volatile memory ensures data integrity during power loss
• Low power consumption prolongs battery life in portable devices
• Wide operating temperature range allows for versatile applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited storage capacity compared to some newer memory types
• Sensitivity to electromagnetic interference (EMI) may require additional shielding measures

Working Principles

The 71V321S55PFI utilizes static random access memory (SRAM) technology. It stores digital information using a network of flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a 2M x 16-bit configuration, allowing for efficient data storage and retrieval.

Detailed Application Field Plans

The 71V321S55PFI finds application in various electronic systems, including but not limited to: - Computer motherboards - Networking equipment - Industrial control systems - Automotive electronics - Medical devices

Its high-speed operation and reliability make it suitable for applications that require fast and secure data storage.

Detailed and Complete Alternative Models

1. 71V321S25PFI - Similar to the 71V321S55PFI, but with a faster access time of 25 nanoseconds.
2. 71V641S55PFI - Double the memory size (64 Megabits) with similar characteristics and pin configuration.
3. 71V128AS15PHI - Higher storage capacity (128 Megabits) with a lower access time of 15 nanoseconds.

These alternative models offer different specifications and can be chosen based on specific application requirements.

(Note: The list of alternative models may vary depending on the availability and advancements in memory technology.)

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