Infineon Technologies
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IPB100N04S303ATMA1
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IPB100N04S303ATMA1

Introduction

The IPB100N04S303ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is commonly used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage capability, low on-resistance, fast switching speed
  • Package: TO-263-3
  • Essence: Efficient power management
  • Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Voltage Rating: 40V
  • Current Rating: 100A
  • On-Resistance: 4mΩ
  • Gate Charge: 60nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

The IPB100N04S303ATMA1 follows the standard pin configuration for a TO-263-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for efficient power management
  • High voltage capability for versatile applications

Advantages and Disadvantages

Advantages

  • High efficiency in power switching applications
  • Low power dissipation
  • Compact package size for space-constrained designs

Disadvantages

  • Sensitive to overvoltage conditions
  • Requires careful handling during installation

Working Principles

The IPB100N04S303ATMA1 operates based on the principles of field-effect transistors. When a suitable gate voltage is applied, it allows current to flow between the drain and source terminals, enabling efficient power switching.

Detailed Application Field Plans

This power MOSFET is widely used in various applications, including: - Switching power supplies - Motor control - DC-DC converters - Automotive systems - Industrial automation

Detailed and Complete Alternative Models

  • IPB100N04S4-03
  • IPB100N04S4-03ATMA1
  • IPB100N04S4-03ATR

In conclusion, the IPB100N04S303ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for a wide range of power management applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPB100N04S303ATMA1 في الحلول التقنية

  1. What is the maximum drain-source voltage of IPB100N04S303ATMA1?

    • The maximum drain-source voltage of IPB100N04S303ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB100N04S303ATMA1?

    • The continuous drain current rating of IPB100N04S303ATMA1 is 100A.

  3. What is the on-resistance of IPB100N04S303ATMA1?

    • The on-resistance of IPB100N04S303ATMA1 is typically 4.3mΩ at Vgs=10V.

  4. What is the gate threshold voltage of IPB100N04S303ATMA1?

    • The gate threshold voltage of IPB100N04S303ATMA1 is typically 2V.

  5. What are the typical applications for IPB100N04S303ATMA1?

    • IPB100N04S303ATMA1 is commonly used in high-current, high-frequency switching applications such as motor control, power supplies, and DC-DC converters.

  6. What is the operating temperature range of IPB100N04S303ATMA1?

    • The operating temperature range of IPB100N04S303ATMA1 is -55°C to 175°C.

  7. Does IPB100N04S303ATMA1 require a heat sink for operation?

    • Depending on the application and power dissipation, a heat sink may be required for optimal performance of IPB100N04S303ATMA1.

  8. Is IPB100N04S303ATMA1 suitable for automotive applications?

    • Yes, IPB100N04S303ATMA1 is designed for automotive applications and meets the relevant industry standards.

  9. What is the package type of IPB100N04S303ATMA1?

    • IPB100N04S303ATMA1 is available in a TO-263-7 package.

  10. Are there any recommended companion components for use with IPB100N04S303ATMA1?

    • It is recommended to use appropriate gate drivers and protection circuitry when integrating IPB100N04S303ATMA1 into a technical solution to ensure reliable and efficient operation.