Infineon Technologies
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IPB107N20NAATMA1
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IPB107N20NAATMA1

Product Overview

Category

The IPB107N20NAATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB107N20NAATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 200V
  • Continuous Drain Current (ID): 107A
  • On-Resistance (RDS(on)): 8.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB107N20NAATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited availability from certain suppliers

Working Principles

The IPB107N20NAATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB107N20NAATMA1 is widely used in: - Power supplies - Motor control systems - Inverters - Switching regulators - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the IPB107N20NAATMA1 include: - IRF1405 - FDP8870 - STP80NF70

In conclusion, the IPB107N20NAATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPB107N20NAATMA1 في الحلول التقنية

  1. What is the maximum voltage rating of IPB107N20NAATMA1?

    • The maximum voltage rating of IPB107N20NAATMA1 is 200V.

  2. What is the maximum continuous drain current of IPB107N20NAATMA1?

    • The maximum continuous drain current of IPB107N20NAATMA1 is 107A.

  3. What is the on-state resistance of IPB107N20NAATMA1?

    • The on-state resistance of IPB107N20NAATMA1 is typically 2.0mΩ.

  4. Is IPB107N20NAATMA1 suitable for high-power applications?

    • Yes, IPB107N20NAATMA1 is suitable for high-power applications due to its high current and voltage ratings.

  5. What type of package does IPB107N20NAATMA1 come in?

    • IPB107N20NAATMA1 comes in a TO-263-7 package.

  6. Does IPB107N20NAATMA1 have built-in protection features?

    • IPB107N20NAATMA1 does not have built-in protection features and may require external circuitry for protection.

  7. What are the typical applications for IPB107N20NAATMA1?

    • Typical applications for IPB107N20NAATMA1 include motor control, power supplies, and inverters.

  8. What is the operating temperature range of IPB107N20NAATMA1?

    • The operating temperature range of IPB107N20NAATMA1 is -55°C to 175°C.

  9. Can IPB107N20NAATMA1 be used in automotive applications?

    • Yes, IPB107N20NAATMA1 is suitable for automotive applications due to its rugged construction and high current capability.

  10. Does IPB107N20NAATMA1 require a heat sink for operation?

    • Depending on the application and power dissipation, IPB107N20NAATMA1 may require a heat sink for optimal thermal management.