Infineon Technologies
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IPD50N04S410ATMA1
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IPD50N04S410ATMA1

Product Overview

Category

The IPD50N04S410ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications such as voltage regulation and switching circuits.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive requirements

Package

The IPD50N04S410ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 50A
  • RDS(ON) (Max) @ VGS = 10V: 4.1mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Power Dissipation (PD): 150W

Detailed Pin Configuration

The IPD50N04S410ATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • Low on-state resistance for minimal power loss
  • High current-carrying capability
  • Fast switching speed for efficient power control

Advantages

  • High power handling capacity
  • Low on-state resistance leading to reduced power dissipation
  • Fast switching speed for improved efficiency

Disadvantages

  • Higher gate capacitance compared to some alternative models
  • Sensitive to static discharge due to its high-performance characteristics

Working Principles

The IPD50N04S410ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

The IPD50N04S410ATMA1 is widely used in various applications including: - Switching power supplies - Motor control - DC-DC converters - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the IPD50N04S410ATMA1 include: - IRF540N - FDP8870 - STP55NF06L

In conclusion, the IPD50N04S410ATMA1 is a versatile power MOSFET with high power handling capabilities, low on-state resistance, and fast switching speed. It finds extensive use in power management applications across various industries.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPD50N04S410ATMA1 في الحلول التقنية

  1. What is the maximum drain-source voltage of IPD50N04S410ATMA1?

    • The maximum drain-source voltage is 40V.

  2. What is the continuous drain current rating of IPD50N04S410ATMA1?

    • The continuous drain current rating is 50A.

  3. What is the on-state resistance (RDS(on)) of IPD50N04S410ATMA1?

    • The on-state resistance is typically 4.1mΩ at VGS = 10V.

  4. Can IPD50N04S410ATMA1 be used in automotive applications?

    • Yes, it is suitable for automotive applications.

  5. What is the operating temperature range of IPD50N04S410ATMA1?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPD50N04S410ATMA1 have built-in protection features?

    • Yes, it has built-in overcurrent protection and thermal shutdown.

  7. What type of package does IPD50N04S410ATMA1 come in?

    • It comes in a TO-252-3 package.

  8. Is IPD50N04S410ATMA1 RoHS compliant?

    • Yes, it is RoHS compliant.

  9. What are some typical applications for IPD50N04S410ATMA1?

    • It is commonly used in power management, motor control, and DC-DC converters.

  10. What is the gate threshold voltage of IPD50N04S410ATMA1?

    • The gate threshold voltage is typically 2.35V.