Infineon Technologies
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IPD50N06S409ATMA1
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IPD50N06S409ATMA1

Product Overview

Category

The IPD50N06S409ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and applications.

Characteristics

  • High current-carrying capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power loss

Package

The IPD50N06S409ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 50A
  • RDS(ON) (Max) @ VGS = 10V: 4.09mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Total Power Dissipation (PD): 130W

Detailed Pin Configuration

The IPD50N06S409ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-state resistance for minimal power loss
  • High current-carrying capability for efficient power handling
  • Fast switching speed for improved performance in switching applications

Advantages

  • High efficiency in power management
  • Suitable for high-current applications
  • Fast response time

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The IPD50N06S409ATMA1 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPD50N06S409ATMA1 is widely used in the following applications: - Switching power supplies - Motor control - DC-DC converters - Inverters

Detailed and Complete Alternative Models

Some alternative models to the IPD50N06S409ATMA1 include: - IRF540N - FDP8878 - STP55NF06L

In conclusion, the IPD50N06S409ATMA1 is a high-performance power MOSFET with excellent characteristics for various electronic applications, offering efficient power management and control capabilities.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPD50N06S409ATMA1 في الحلول التقنية

  1. What is the maximum drain-source voltage of IPD50N06S409ATMA1?

    • The maximum drain-source voltage of IPD50N06S409ATMA1 is 60V.

  2. What is the continuous drain current rating of IPD50N06S409ATMA1?

    • The continuous drain current rating of IPD50N06S409ATMA1 is 50A.

  3. What is the on-state resistance (RDS(on)) of IPD50N06S409ATMA1?

    • The on-state resistance (RDS(on)) of IPD50N06S409ATMA1 is typically 0.019 ohms.

  4. What is the maximum power dissipation of IPD50N06S409ATMA1?

    • The maximum power dissipation of IPD50N06S409ATMA1 is 200W.

  5. What are the typical applications for IPD50N06S409ATMA1?

    • IPD50N06S409ATMA1 is commonly used in applications such as motor control, power supplies, and DC-DC converters.

  6. What is the gate threshold voltage of IPD50N06S409ATMA1?

    • The gate threshold voltage of IPD50N06S409ATMA1 is typically 2.5V.

  7. Is IPD50N06S409ATMA1 suitable for automotive applications?

    • Yes, IPD50N06S409ATMA1 is designed for automotive applications and meets automotive quality standards.

  8. What is the operating temperature range of IPD50N06S409ATMA1?

    • The operating temperature range of IPD50N06S409ATMA1 is -55°C to 175°C.

  9. Does IPD50N06S409ATMA1 have built-in protection features?

    • Yes, IPD50N06S409ATMA1 has built-in overcurrent protection and thermal shutdown features.

  10. Can IPD50N06S409ATMA1 be used in high-frequency switching applications?

    • Yes, IPD50N06S409ATMA1 is suitable for high-frequency switching due to its low RDS(on) and fast switching characteristics.