IPP076N12N3GXKSA1
Product Overview
Category: Power MOSFET
Use: High power switching applications
Characteristics: High current handling, low on-resistance, high efficiency
Package: TO-220
Essence: Power management
Packaging/Quantity: Tape and reel, 250 units per reel
Specifications
- Voltage Rating: 120V
- Current Rating: 80A
- On-Resistance: 7.6mΩ
- Gate Charge: 76nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low on-resistance for high efficiency
- Fast switching speed for high power applications
- Enhanced thermal performance for reliability
Advantages and Disadvantages
Advantages: - High current handling capability - Low on-resistance for reduced power loss - Wide operating temperature range
Disadvantages: - Relatively large package size - Higher gate charge compared to some alternatives
Working Principles
IPP076N12N3GXKSA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of high-power applications including: - Switched-mode power supplies - Motor control - Inverters - DC-DC converters
Detailed and Complete Alternative Models
- IPP065N12N3GXKSA1
- Voltage Rating: 120V
- Current Rating: 65A
- On-Resistance: 9.5mΩ
- IPP090N12N3GXKSA1
- Voltage Rating: 120V
- Current Rating: 90A
- On-Resistance: 6.2mΩ
- IPP110N12N3GXKSA1
- Voltage Rating: 120V
- Current Rating: 110A
- On-Resistance: 5.3mΩ
In conclusion, IPP076N12N3GXKSA1 is a high-performance power MOSFET suitable for various high-power switching applications, offering high current handling, low on-resistance, and enhanced thermal performance. While it has certain disadvantages such as a relatively large package size and higher gate charge, its advantages make it a preferred choice for demanding power management applications.
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