IPT012N08N5ATMA1
Product Category: Power MOSFET
Basic Information Overview: - Category: Semiconductor - Use: Power switching applications - Characteristics: High voltage, low on-resistance, fast switching speed - Package: TO-220 - Essence: Efficient power management - Packaging/Quantity: Tape and reel, 1000 units per reel
Specifications: - Voltage Rating: 80V - Current Rating: 120A - On-Resistance: 1.2mΩ - Gate Charge: 45nC - Operating Temperature: -55°C to 175°C
Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source
Functional Features: - Low on-resistance for minimal power dissipation - Fast switching speed for improved efficiency - High voltage rating for versatile applications
Advantages: - Enhanced power management capabilities - Suitable for high-power applications - Reliable performance under varying conditions
Disadvantages: - Higher cost compared to standard MOSFETs - Requires careful thermal management due to high power dissipation
Working Principles: The IPT012N08N5ATMA1 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows the passage of current, enabling efficient power switching.
Detailed Application Field Plans: - Switched-mode power supplies - Motor control systems - Solar inverters - Electric vehicle powertrains
Detailed and Complete Alternative Models: 1. IRF540N - Voltage Rating: 100V - Current Rating: 33A - On-Resistance: 44mΩ 2. FDP7030L - Voltage Rating: 100V - Current Rating: 60A - On-Resistance: 9mΩ 3. STP75NF75 - Voltage Rating: 75V - Current Rating: 80A - On-Resistance: 10mΩ
This completes the entry for IPT012N08N5ATMA1 in the English editing encyclopedia format.
قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق IPT012N08N5ATMA1 في الحلول التقنية
What is the maximum drain current of IPT012N08N5ATMA1?
- The maximum drain current of IPT012N08N5ATMA1 is 120A.
What is the gate-source voltage rating of IPT012N08N5ATMA1?
- The gate-source voltage rating of IPT012N08N5ATMA1 is ±20V.
What is the on-state resistance (RDS(on)) of IPT012N08N5ATMA1?
- The on-state resistance (RDS(on)) of IPT012N08N5ATMA1 is 0.0012 ohms.
What is the maximum power dissipation of IPT012N08N5ATMA1?
- The maximum power dissipation of IPT012N08N5ATMA1 is 300W.
What are the typical applications for IPT012N08N5ATMA1?
- IPT012N08N5ATMA1 is commonly used in applications such as motor control, power supplies, and DC-DC converters.
What is the operating temperature range of IPT012N08N5ATMA1?
- The operating temperature range of IPT012N08N5ATMA1 is -55°C to 175°C.
What is the gate charge of IPT012N08N5ATMA1?
- The gate charge of IPT012N08N5ATMA1 is typically 50nC.
Does IPT012N08N5ATMA1 have built-in protection features?
- Yes, IPT012N08N5ATMA1 has built-in protection against overcurrent and overtemperature conditions.
What is the input capacitance of IPT012N08N5ATMA1?
- The input capacitance of IPT012N08N5ATMA1 is typically 5200pF.
Is IPT012N08N5ATMA1 suitable for high-frequency switching applications?
- Yes, IPT012N08N5ATMA1 is suitable for high-frequency switching due to its low RDS(on) and gate charge characteristics.