IPW65R037C6FKSA1
Product Overview
Category
The IPW65R037C6FKSA1 belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits for switching and amplification purposes.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPW65R037C6FKSA1 is typically available in a TO-247 package.
Essence
This MOSFET is essential for efficient power management in various electronic applications.
Packaging/Quantity
It is usually packaged individually and sold in quantities suitable for production needs.
Specifications
- Drain-Source Voltage (VDS): 650V
- Continuous Drain Current (ID): 52A
- On-Resistance (RDS(on)): 0.037 ohms
- Power Dissipation (PD): 280W
- Gate-Source Voltage (VGS): ±20V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPW65R037C6FKSA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and heat generation.
- Fast switching speed enables efficient operation in switching circuits.
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Fast switching speed
Disadvantages
- May require careful handling due to its high voltage capability
- Sensitive to static electricity
Working Principles
The IPW65R037C6FKSA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IPW65R037C6FKSA1 is widely used in: - Switch-mode power supplies - Motor control systems - Inverters for renewable energy systems - Electric vehicle powertrains
Detailed and Complete Alternative Models
- IPW60R190C6 - Similar characteristics with lower voltage capability
- IPW60R099C6 - Lower on-resistance with slightly lower voltage rating
- IPW65R019C7 - Higher voltage capability with comparable on-resistance
In conclusion, the IPW65R037C6FKSA1 power MOSFET offers high performance and reliability for various high-power electronic applications, making it an essential component in modern power electronics.
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What is the maximum drain current of IPW65R037C6FKSA1?
- The maximum drain current of IPW65R037C6FKSA1 is 120A.
What is the typical gate charge of IPW65R037C6FKSA1?
- The typical gate charge of IPW65R037C6FKSA1 is 60nC.
What is the voltage rating of IPW65R037C6FKSA1?
- IPW65R037C6FKSA1 has a voltage rating of 650V.
What is the on-resistance of IPW65R037C6FKSA1?
- The on-resistance of IPW65R037C6FKSA1 is typically 37mΩ.
What are the recommended operating temperature range for IPW65R037C6FKSA1?
- The recommended operating temperature range for IPW65R037C6FKSA1 is -55°C to 175°C.
Is IPW65R037C6FKSA1 suitable for high-frequency applications?
- Yes, IPW65R037C6FKSA1 is suitable for high-frequency applications due to its low gate charge and fast switching characteristics.
Does IPW65R037C6FKSA1 require a heat sink for operation?
- It is recommended to use a heat sink for IPW65R037C6FKSA1 to ensure optimal thermal performance, especially in high-power applications.
What are the typical applications for IPW65R037C6FKSA1?
- IPW65R037C6FKSA1 is commonly used in power supplies, motor control, and automotive systems.
Does IPW65R037C6FKSA1 have built-in protection features?
- IPW65R037C6FKSA1 offers built-in overcurrent protection and thermal shutdown to enhance system reliability.
What are the key advantages of using IPW65R037C6FKSA1 in technical solutions?
- The key advantages of using IPW65R037C6FKSA1 include low on-resistance, high current capability, and robustness for demanding applications.