DS1230Y-120+ English Editing Encyclopedia Entry

Product Overview

Category

The DS1230Y-120+ belongs to the category of non-volatile static random-access memory (NVSRAM).

Use

It is primarily used for storing data in applications that require both high-speed read/write operations and non-volatility.

Characteristics

• Non-volatile: The DS1230Y-120+ retains data even when power is removed.
• High-speed operation: It offers fast access times for efficient data retrieval.
• Reliable: The NVSRAM technology ensures data integrity and endurance.
• Low power consumption: It consumes minimal power during operation.
• Wide temperature range: It can operate reliably in extreme temperature conditions.

Package

The DS1230Y-120+ is available in a 28-pin DIP (Dual In-line Package) format.

Essence

The essence of the DS1230Y-120+ is its ability to combine the benefits of both RAM and non-volatile memory, providing a reliable and high-performance storage solution.

Packaging/Quantity

The DS1230Y-120+ is typically packaged individually and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Memory capacity: 32 kilobits (4 kilobytes)
• Access time: 120 nanoseconds
• Supply voltage: 4.5V to 5.5V
• Operating temperature range: -40°C to +85°C
• Data retention period: Over 10 years

Detailed Pin Configuration

The DS1230Y-120+ has a total of 28 pins, each serving a specific function. Here is a detailed pin configuration:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Ground (GND)
7. Vcc

Functional Features

• High-speed read and write operations
• Non-volatile data storage
• Low power consumption
• Automatic store on power loss
• Unlimited write cycles
• Data protection during power interruptions

Advantages and Disadvantages

Advantages

• Combines the benefits of RAM and non-volatile memory
• Fast access times for efficient data retrieval
• Reliable data storage even in the absence of power
• Endurance and data integrity
• Suitable for extreme temperature conditions

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost compared to traditional RAM

Working Principles

The DS1230Y-120+ utilizes a combination of volatile and non-volatile memory technologies. It employs a static random-access memory (SRAM) array for high-speed read/write operations. Additionally, it incorporates a non-volatile element that allows data to be retained even when power is removed. This is achieved through the use of a built-in energy source, such as a battery or supercapacitor, which provides backup power to preserve the stored data.

Detailed Application Field Plans

The DS1230Y-120+ finds applications in various fields where both high-speed data access and non-volatility are crucial. Some potential application areas include:

1. Industrial automation systems
2. Medical devices
3. Automotive electronics
4. Aerospace and defense systems
5. Power grid monitoring and control
6. Data logging and event recording

Detailed and Complete Alternative Models

1. DS1230AB-120+: Similar to the DS1230Y-120+, but with extended temperature range (-55°C to +125°C).
2. DS1230AB-200+: Offers higher access time (200 nanoseconds) for applications with less stringent speed requirements.
3. DS1230AB-150+: Provides a balance between access time (150 nanoseconds) and temperature range (-40°C to +85°C).

These alternative models offer similar functionality to the DS1230Y-120+ but may have variations in specifications to cater to specific application requirements.

In conclusion, the DS1230Y-120+ is a non-volatile static random-access memory that combines the benefits of RAM and non-volatile memory technologies. It offers high-speed read/write operations, reliability, and low power consumption. With its wide temperature range and data retention capabilities, it finds applications in various industries. Alternative models provide flexibility to meet specific application needs.