DS1250Y-70IND

Product Overview

Category: Integrated Circuit (IC)

Use: The DS1250Y-70IND is a high-performance nonvolatile static RAM (NVSRAM) designed for use in various electronic devices. It combines the benefits of both SRAM and EEPROM, providing fast read/write access with nonvolatile data storage.

Characteristics: - High-speed access time - Nonvolatile data retention - Low power consumption - Wide operating voltage range - Durable and reliable

Package: The DS1250Y-70IND is available in a 32-pin DIP (Dual In-line Package) or SOIC (Small Outline Integrated Circuit) package. The package ensures easy integration into existing circuit boards and provides protection to the IC.

Essence: The essence of the DS1250Y-70IND lies in its ability to retain data even when power is removed, making it suitable for applications where data integrity is crucial.

Packaging/Quantity: The DS1250Y-70IND is typically packaged in tubes or trays, with quantities varying based on customer requirements.

Specifications

• Operating Voltage: 4.5V to 5.5V
• Access Time: 70ns
• Memory Size: 512Kb (64K x 8)
• Data Retention: Over 10 years
• Endurance: 1 million write cycles
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The DS1250Y-70IND features a 32-pin configuration with the following pin functions:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A15)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (VCC)
7. Ground (GND)

Functional Features

• Nonvolatile Data Storage: The DS1250Y-70IND retains data even when power is removed, ensuring data integrity and eliminating the need for external backup systems.
• High-Speed Access: With a 70ns access time, the IC provides fast read/write operations, making it suitable for applications requiring quick data retrieval.
• Low Power Consumption: The IC operates at low power levels, minimizing energy consumption and extending battery life in portable devices.
• Wide Operating Voltage Range: The DS1250Y-70IND can operate within a voltage range of 4.5V to 5.5V, providing flexibility in various electronic systems.

Advantages and Disadvantages

Advantages: - Nonvolatile data storage - Fast access time - Low power consumption - Wide operating voltage range - Durable and reliable

Disadvantages: - Limited memory size (512Kb) - Relatively higher cost compared to standard SRAM

Working Principles

The DS1250Y-70IND utilizes a combination of SRAM and EEPROM technologies. It employs a floating-gate cell design that allows for nonvolatile data storage. When data is written to the IC, it is stored in the EEPROM portion, which retains the information even when power is removed. During read operations, the SRAM portion of the IC is accessed, providing fast and efficient data retrieval.

Detailed Application Field Plans

The DS1250Y-70IND finds application in various fields, including but not limited to: 1. Industrial Control Systems 2. Automotive Electronics 3. Medical Devices 4. Communication Equipment 5. Aerospace and Defense Systems

In industrial control systems, the IC can be used for storing critical configuration data or program code. In automotive electronics, it can be utilized for data logging or event storage. Medical devices can benefit from its nonvolatile data storage capabilities for patient monitoring or device settings. Communication equipment can employ the IC for buffering or caching purposes. Aerospace and defense systems can utilize it for mission-critical data storage.

Detailed and Complete Alternative Models

1. DS1230AB-120: 1Mb (128K x 8) NVSRAM, 120ns access time
2. DS1245Y-70: 1Mb (128K x 8) NVSRAM, 70ns access time
3. DS1260-100: 4Mb (512K x 8) NVSRAM, 100ns access time
4. DS1275-100: 16Mb (2M x 8) NVSRAM, 100ns access time

These alternative models offer different memory sizes and access times to cater to specific application requirements.

Word count: 529 words