AT29BV010A-12JU

Product Overview

Category

AT29BV010A-12JU belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing data in electronic systems, providing reliable and long-term storage capabilities.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High density: Offers a large storage capacity.
• Fast access time: Allows for quick retrieval of stored data.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT29BV010A-12JU is available in a standard 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT29BV010A-12JU lies in its ability to provide non-volatile storage with high density and fast access times, making it suitable for various applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT29BV010A-12JU chips. The exact quantity may vary depending on the supplier.

Specifications

• Part Number: AT29BV010A-12JU
• Memory Type: Flash
• Organization: 128K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. NC
26. GND
27. A8
28. A9
29. A11
30. A13
31. A15
32. WP#

Functional Features

• Byte-wide access: Allows individual bytes to be read or written independently.
• Sector erase capability: Enables selective erasure of specific memory sectors.
• Hardware and software data protection: Provides mechanisms to prevent accidental modification or erasure of stored data.
• Automatic sleep mode: Reduces power consumption when the device is idle.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data remains intact even during power loss.
• High density: Offers a large storage capacity in a compact form factor.
• Fast access time: Allows for quick retrieval of data.
• Low power consumption: Operates efficiently, conserving energy.

Disadvantages

• Limited endurance: The erase/program cycle endurance is limited to 10,000 cycles.
• Relatively slower write speed compared to volatile memory technologies.

Working Principles

AT29BV010A-12JU utilizes flash memory technology, which is based on floating-gate transistors. These transistors can trap and store electrical charges, representing binary data as "0" or "1". The stored charges can be erased or programmed using specific voltage levels applied to the memory cells. This allows for non-volatile storage of data that can be accessed and modified as needed.

Detailed Application Field Plans

AT29BV010A-12JU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

It is commonly used for firmware storage, configuration data storage, and code execution in microcontrollers, digital cameras, set-top boxes, and other similar devices.

Detailed and Complete Alternative Models

• AT29BV010A-15JU
• AT29BV010A-20JU
• AT29BV010A-25JU
• AT29BV010A-30JU

These alternative models offer different access times, allowing users to select the most suitable option based on their specific requirements.

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