AT29BV010A-12JU-T

Product Overview

Category

AT29BV010A-12JU-T belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT29BV010A-12JU-T has a storage capacity of 1 megabit (128 kilobytes).
• Low power consumption: It operates at low voltage and consumes minimal power.
• Fast access time: The device offers a fast access time of 120 nanoseconds.

Package

The AT29BV010A-12JU-T is available in a standard 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT29BV010A-12JU-T lies in its ability to provide reliable and non-volatile storage for electronic systems, ensuring data integrity even during power interruptions.

Packaging/Quantity

The AT29BV010A-12JU-T is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT29BV010A-12JU-T has a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. NC
25. GND
26. RP#
27. BYTE#
28. RESET#
29. WP#
30. A15
31. A13
32. A8

Functional Features

• Byte-wide operations: The AT29BV010A-12JU-T supports both byte-level read and write operations.
• Hardware and software protection: It offers various protection mechanisms to prevent unauthorized access or accidental modification of data.
• Automatic sleep mode: The device enters a low-power sleep mode when not in use, conserving energy.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity during power interruptions.
• High storage capacity for a wide range of applications.
• Low power consumption prolongs battery life in portable devices.
• Fast access time allows for quick retrieval of data.

Disadvantages

• Limited erase/write cycle endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory solutions.

Working Principles

The AT29BV010A-12JU-T utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The stored information is retained even when power is removed, making it suitable for long-term data storage.

Detailed Application Field Plans

The AT29BV010A-12JU-T finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Its high capacity, non-volatile nature, and fast access time make it suitable for storing firmware, configuration data, and other critical information in these applications.

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT29BV010A-12JU-T include: - AT28C010E-12PI: 1 megabit EEPROM with parallel interface. - SST39SF010A-70-4C-PHE: 1 megabit flash memory with a 70 ns access time. - M29F010B-90N6: 1 megabit flash memory with a 90 ns access time.

These alternative models can be considered based on specific application requirements and compatibility with existing systems.

In conclusion, the AT29BV010A-12JU-T is a non-volatile memory device that provides reliable storage for digital information. With its high capacity, low power consumption, and fast access time, it is well-suited for a