AT49F001AT-55VI

Product Overview

Category

The AT49F001AT-55VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The AT49F001AT-55VI retains data even when power is removed.
• High capacity: It has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: The device offers a fast access time of 55 nanoseconds.
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.

Package

The AT49F001AT-55VI is available in a standard 32-pin plastic dual in-line package (PDIP).

Essence

The essence of the AT49F001AT-55VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F001AT-55VI is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001AT-55VI features a 32-pin configuration. Here is a detailed pinout:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy integration: The AT49F001AT-55VI can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The device supports a standard parallel interface for seamless communication with the host system.
• Sector erase capability: The AT49F001AT-55VI allows for erasing specific sectors, enhancing flexibility in data management.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity enables storage of large amounts of digital information.
• Fast access time facilitates quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies.
• Relatively larger physical package size compared to newer memory technologies.

Working Principles

The AT49F001AT-55VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. This state change is retained even when power is removed. To erase data, the memory cells are exposed to an electrical charge, resetting them to their initial state.

Detailed Application Field Plans

The AT49F001AT-55VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

• AT49F001NT-55VI: Similar to the AT49F001AT-55VI, but with a different package type (TSOP).
• AT49F002NT-55VI: Double the capacity of the AT49F001AT-55VI (2 megabits) with similar specifications.
• AT49F010-70TI: Higher capacity (1 megabit) with a slower access time (70 ns).

These alternative models offer similar functionality and can be considered based on specific requirements.

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