MT29E512G08CMCCBH7-6:C

Basic Information Overview

• Category: Memory Storage Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast data access
• Package: Integrated Circuit (IC)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a protective casing

Specifications

• Model: MT29E512G08CMCCBH7-6:C
• Capacity: 512 gigabytes (GB)
• Interface: Universal Flash Storage (UFS)
• Voltage: 2.7V - 3.6V
• Operating Temperature: -25°C to 85°C
• Speed: Read up to 850 megabytes per second (MB/s), Write up to 260 MB/s

Detailed Pin Configuration

The MT29E512G08CMCCBH7-6:C has a total of 153 pins, which are arranged as follows:

1. VCCQ
2. VCC
3. GND
4. RESET#
5. CLK
6. CMD
7. DATA0
8. DATA1
9. DATA2
10. DATA3
11. DATA4
12. DATA5
13. DATA6
14. DATA7
15. DATA8
16. DATA9
17. DATA10
18. DATA11
19. DATA12
20. DATA13
21. DATA14
22. DATA15
23. DATA16
24. DATA17
25. DATA18
26. DATA19
27. DATA20
28. DATA21
29. DATA22
30. DATA23
31. DATA24
32. DATA25
33. DATA26
34. DATA27
35. DATA28
36. DATA29
37. DATA30
38. DATA31
39. RST#
40. CLKREQ#

(Note: The pin configuration is simplified for brevity.)

Functional Features

• High-speed data transfer
• Reliable and durable storage
• Low power consumption
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan

Advantages

• Large storage capacity
• Fast data access speeds
• Compact form factor
• Compatibility with UFS interface
• Efficient power usage

Disadvantages

• Relatively high cost compared to other memory options
• Limited write endurance (compared to some other memory technologies)

Working Principles

The MT29E512G08CMCCBH7-6:C utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and NAND logic gates to store binary information in an array of memory cells. Data is written by applying electrical charges to the floating gates, and read by sensing the resulting voltage levels. The UFS interface facilitates communication between the chip and the host device.

Detailed Application Field Plans

The MT29E512G08CMCCBH7-6:C is commonly used in various electronic devices that require high-capacity and fast-access storage, such as: - Smartphones - Tablets - Solid-state drives (SSDs) - Portable media players - Digital cameras

Detailed and Complete Alternative Models

1. MT29E1T08EMCBBH6-12:A - 1 terabyte (TB) capacity, UFS interface
2. MT29F256G08CECBBH8-10:A - 256 GB capacity, eMMC interface
3. MT29P128M16JTJCJ4-75:A - 128 megabytes (MB) capacity, DDR3 interface
4. MT29TZZZ8D5JKEZB-125:A - 8 gigabytes (GB) capacity, LPDDR4 interface

(Note: The alternative models listed above are for illustrative purposes only and may not represent the latest available options.)

This entry provides an overview of the MT29E512G08CMCCBH7-6:C flash memory chip. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.