MT29F128G08AKCDBJ5-6:D TR

Product Overview

Category

The MT29F128G08AKCDBJ5-6:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AKCDBJ5-6:D TR offers a storage capacity of 128 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F128G08AKCDBJ5-6:D TR is designed to minimize power consumption, making it suitable for battery-powered devices.
• Compact package: This NAND flash memory is available in a small form factor, enabling space-efficient integration into electronic devices.

Packaging/Quantity

The MT29F128G08AKCDBJ5-6:D TR is typically packaged in a surface-mount technology (SMT) package. It is commonly supplied in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory type: NAND flash
• Storage capacity: 128 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data transfer rate: Up to 100 megabytes per second (MB/s)
• Endurance: Up to 10,000 program/erase cycles
• Package dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F128G08AKCDBJ5-6:D TR features a standard pin configuration for NAND flash memory devices. The following table provides a detailed pin description:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CE# | Chip enable | | 4 | CLE | Command latch enable | | 5 | ALE | Address latch enable | | 6 | RE# | Read enable | | 7 | WE# | Write enable | | 8-15 | IO0-IO7 | Data input/output pins | | 16 | R/B# | Ready/busy status |

Functional Features

• Block-based architecture: The MT29F128G08AKCDBJ5-6:D TR utilizes a block-based organization, allowing for efficient data storage and retrieval.
• Error correction code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-leveling algorithm: The product employs wear-leveling techniques to distribute write operations evenly across memory blocks, extending the lifespan of the device.
• Bad block management: The MT29F128G08AKCDBJ5-6:D TR includes mechanisms to identify and manage defective blocks, preventing data loss.

Advantages and Disadvantages

Advantages

• High storage capacity enables extensive data storage.
• Fast data transfer rate facilitates quick read and write operations.
• Low power consumption prolongs battery life in portable devices.
• Compact package allows for space-efficient integration.
• Reliable performance ensures data integrity.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F128G08AKCDBJ5-6:D TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges represent the binary states of 0s and 1s.

To read data, the controller applies appropriate voltages to the memory cells and measures the resulting electrical current. To write data, the controller applies specific voltage levels to program or erase the charges within the memory cells.

Detailed Application Field Plans

The MT29F128G08AKCDBJ5-6:D TR finds applications in various electronic devices that require high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for operating systems, applications, and user data.
2. Digital cameras: High-resolution images and videos can be stored on this memory for quick access and reliable storage.
3. Solid-state drives (SSDs): The product