MT29F128G08CBCCBH6-6ITR:C TR

Product Overview

Category

The MT29F128G08CBCCBH6-6ITR:C TR belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08CBCCBH6-6ITR:C TR offers a storage capacity of 128 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with low power consumption.
• Durable design: The product is designed to withstand shock, vibration, and extreme temperature conditions.
• Compact package: The MT29F128G08CBCCBH6-6ITR:C TR comes in a small form factor, making it suitable for space-constrained devices.

Package and Quantity

The MT29F128G08CBCCBH6-6ITR:C TR is available in a surface-mount package. It is typically sold in reels containing a specific quantity, usually ranging from hundreds to thousands of units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 128 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: 10,000 cycles

Pin Configuration

The MT29F128G08CBCCBH6-6ITR:C TR follows a standard pin configuration for NAND flash memory. The detailed pinout is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip Enable
4. CLE: Command Latch Enable
5. ALE: Address Latch Enable
6. RE: Read Enable
7. WE: Write Enable
8. R/B: Ready/Busy status
9. DQ0-DQ7: Data Input/Output lines

Functional Features

• Page Program: Allows data to be written into the memory in page-sized increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Random Access: Provides random access to any location within the memory for read or write operations.
• Wear-Leveling: Implements wear-leveling algorithms to distribute write operations evenly across the memory cells, extending the product's lifespan.
• Error Correction Code (ECC): Incorporates ECC techniques to detect and correct errors that may occur during data transfer.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance with low power consumption.
• Durable design withstands harsh environmental conditions.
• Compact package suitable for space-constrained devices.

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to alternative storage solutions.

Working Principles

The MT29F128G08CBCCBH6-6ITR:C TR utilizes NAND flash memory technology. It stores data by trapping electric charges in a grid of memory cells. These cells are organized into pages and blocks, allowing for efficient reading and writing operations. When data is written, the memory controller applies a high voltage to the selected memory cells, causing electrons to tunnel through an insulating layer and get trapped in the floating gate. During read operations, the stored charge is measured to determine the data value.

Detailed Application Field Plans

The MT29F128G08CBCCBH6-6ITR:C TR finds application in various electronic devices that require high-capacity and reliable data storage. Some of the key application fields include:

1. Smartphones and Tablets: Used for storing operating systems, applications, and user data.
2. Digital Cameras: Provides storage for high-resolution photos and videos.
3. Solid-State Drives (SSDs): Used as primary storage in computers and laptops, offering faster boot times and improved system performance.
4. Industrial Control Systems: Enables data logging and storage in industrial automation and control applications.
5. Automotive Electronics: Used for storing firmware, maps, and other critical data in automotive systems.

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0D
2. Toshiba TH58NVG7D2FLA89
3. Micron MT29F128G08CBABA
4. Intel NAND01GW3B2CN6E
5. SK Hynix H27UCG8