Micron Technology Inc.
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MT29F128G08EBEBBWP:B TR

MT29F128G08EBEBBWP:B TR

Product Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (128GB)
    • Reliable and durable
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory chip
  • Packaging/Quantity: Individual chip

Specifications

  • Model: MT29F128G08EBEBBWP:B TR
  • Capacity: 128GB
  • Interface: NAND Flash
  • Voltage: 3.3V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 400Mbps
  • Form Factor: 48-ball FBGA

Pin Configuration

The MT29F128G08EBEBBWP:B TR chip has the following pin configuration:

  1. VCC
  2. GND
  3. ALE/CLE
  4. CE#
  5. RE#
  6. WE#
  7. R/B#
  8. WP#
  9. NC
  10. DQ0
  11. DQ1
  12. DQ2
  13. DQ3
  14. DQ4
  15. DQ5
  16. DQ6
  17. DQ7
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
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  47. NC
  48. NC

Functional Features

  • High-speed data transfer
  • Error correction and detection mechanisms
  • Wear-leveling algorithms for extended lifespan
  • Block management for efficient storage utilization
  • Power-saving features
  • Support for various NAND Flash interfaces

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable and durable
  • Low power consumption
  • Suitable for a wide range of applications

Disadvantages

  • Relatively high cost compared to other memory options
  • Limited write endurance compared to some other memory technologies

Working Principles

The MT29F128G08EBEBBWP:B TR is based on NAND Flash technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information, allowing for high-density storage. The chip utilizes various control signals and algorithms to manage data reading, writing, and erasing operations.

Application Field Plans

The MT29F128G08EBEBBWP:B TR chip finds applications in various fields, including:

  1. Consumer electronics (e.g., smartphones, tablets)
  2. Automotive systems (e.g., infotainment, navigation)
  3. Industrial equipment (e.g., data loggers, control systems)
  4. Networking devices (e.g., routers, switches)
  5. Medical devices (e.g., imaging systems, patient monitors)

Alternative Models

Other alternative models with similar specifications and functionality include:

  1. Samsung K9GAG08U0E
  2. Micron MT29F128G08CBACD4
  3. Toshiba TH58NVG8T2JTA20
  4. Intel JS29F128G08AME1

These models can be considered as alternatives depending on specific requirements and availability.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MT29F128G08EBEBBWP:B TR في الحلول التقنية

Sure! Here are 10 common questions and answers related to the application of MT29F128G08EBEBBWP:B TR in technical solutions:

  1. Q: What is the capacity of the MT29F128G08EBEBBWP:B TR flash memory? A: The MT29F128G08EBEBBWP:B TR flash memory has a capacity of 128 gigabits (16 gigabytes).

  2. Q: What is the interface used for connecting the MT29F128G08EBEBBWP:B TR flash memory to a system? A: The MT29F128G08EBEBBWP:B TR flash memory uses a standard NAND flash interface.

  3. Q: Can the MT29F128G08EBEBBWP:B TR flash memory be used in industrial applications? A: Yes, the MT29F128G08EBEBBWP:B TR flash memory is designed for industrial-grade applications.

  4. Q: What is the operating voltage range of the MT29F128G08EBEBBWP:B TR flash memory? A: The MT29F128G08EBEBBWP:B TR flash memory operates at a voltage range of 2.7V to 3.6V.

  5. Q: Is the MT29F128G08EBEBBWP:B TR flash memory compatible with various operating systems? A: Yes, the MT29F128G08EBEBBWP:B TR flash memory is compatible with popular operating systems like Windows, Linux, and Android.

  6. Q: Does the MT29F128G08EBEBBWP:B TR flash memory support wear-leveling algorithms? A: Yes, the MT29F128G08EBEBBWP:B TR flash memory supports wear-leveling algorithms to ensure even distribution of write/erase cycles.

  7. Q: What is the maximum data transfer rate of the MT29F128G08EBEBBWP:B TR flash memory? A: The MT29F128G08EBEBBWP:B TR flash memory has a maximum data transfer rate of up to 200 megabytes per second.

  8. Q: Can the MT29F128G08EBEBBWP:B TR flash memory withstand extreme temperatures? A: Yes, the MT29F128G08EBEBBWP:B TR flash memory is designed to operate reliably in a wide temperature range, including extreme temperatures.

  9. Q: Does the MT29F128G08EBEBBWP:B TR flash memory support error correction codes (ECC)? A: Yes, the MT29F128G08EBEBBWP:B TR flash memory supports built-in error correction codes for data integrity.

  10. Q: Is the MT29F128G08EBEBBWP:B TR flash memory suitable for automotive applications? A: Yes, the MT29F128G08EBEBBWP:B TR flash memory is suitable for automotive applications due to its high reliability and temperature tolerance.

Please note that the specific details and features may vary depending on the manufacturer's specifications and application requirements.