MT29F1T08CUCBBH8-6C:B

Product Overview

Category

MT29F1T08CUCBBH8-6C:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Compact package size
• Reliable data retention
• Wide operating temperature range

Package

MT29F1T08CUCBBH8-6C:B is available in a small form factor package, making it suitable for space-constrained applications. The package type is BGA (Ball Grid Array).

Essence

The essence of MT29F1T08CUCBBH8-6C:B lies in its ability to provide high-density non-volatile storage with fast access times, making it an essential component in modern electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package can vary, but it is commonly available in quantities of 100 or more.

Specifications

• Storage Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle Mode 2.0
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Page Size: 8 Kilobytes
• Block Size: 512 Kilobytes
• Read/Write Speed: Up to 200 Megabytes per second

Detailed Pin Configuration

The pin configuration of MT29F1T08CUCBBH8-6C:B is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data input/output
8. R/B# - Ready/Busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Page-level and block-level data operations
• Error correction code (ECC) for data integrity
• Wear leveling algorithm to distribute write cycles evenly across memory cells
• Bad block management for efficient use of available storage space
• Power-saving features such as deep power-down mode

Advantages

• High storage capacity allows for large amounts of data to be stored
• Fast read and write speeds enhance overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact package size enables integration into small form factor devices
• Reliable data retention ensures long-term data integrity
• Wide operating temperature range makes it suitable for various environments

Disadvantages

• Limited endurance due to the finite number of write cycles
• Higher cost compared to other types of memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

MT29F1T08CUCBBH8-6C:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The data is accessed by sending specific commands and addresses to the memory controller, which controls the read and write operations.

Detailed Application Field Plans

MT29F1T08CUCBBH8-6C:B finds applications in a wide range of electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT29F1T08CUCBBH8-6C:B include: - Samsung K9GAG08U0E - Toshiba TH58NVG5D2ETA20 - Micron MT29F1G08ABADAWP

These models offer similar functionality and can be used as alternatives depending on specific requirements and availability.

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