MT29F1T08CUCCBH8-6ITR:C

Product Overview

Category

MT29F1T08CUCCBH8-6ITR:C belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

The MT29F1T08CUCCBH8-6ITR:C NAND Flash Memory comes in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

The MT29F1T08CUCCBH8-6ITR:C NAND Flash Memory is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 600 Megabytes per second (MB/s)
• Endurance: Up to 10,000 Program/Erase cycles

Detailed Pin Configuration

The MT29F1T08CUCCBH8-6ITR:C NAND Flash Memory has a pin configuration as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A19 - Address Inputs
7. DQ0-DQ15 - Data Input/Output
8. R/B - Ready/Busy status
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable

Functional Features

• Page Read and Program Operations
• Block Erase Operation
• Random Access to Memory Cells
• Error Correction Code (ECC) Support
• Wear-Leveling Algorithm for Enhanced Lifespan
• Bad Block Management

Advantages

• High storage capacity allows for storing large amounts of data.
• Fast read and write speeds enable quick access to stored information.
• Non-volatile memory retains data even when power is disconnected.
• Low power consumption helps prolong battery life in portable devices.
• Compact size facilitates integration into small electronic devices.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit compared to some alternative memory technologies.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT29F1T08CUCCBH8-6ITR:C NAND Flash Memory utilizes a series of memory cells that store data as electrical charges. These cells are organized into pages, blocks, and planes. The memory can be read from or written to by applying appropriate voltage levels to the control pins. The data is stored in binary format, with each memory cell representing a bit.

Detailed Application Field Plans

The MT29F1T08CUCCBH8-6ITR:C NAND Flash Memory finds applications in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
2. Automotive: Integrated into infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
3. Industrial: Utilized in industrial automation, robotics, and control systems for data storage and firmware updates.
4. Enterprise Storage: Incorporated into solid-state drives (SSDs) for high-performance data storage in servers and data centers.

Detailed and Complete Alternative Models

1. Samsung K9F1G08U0D
2. Toshiba TH58NVG7D2FLA89
3. Micron MT29F1G08ABADAWP

These alternative models offer similar specifications and functionality to the MT29F1T08CUCCBH8-6ITR:C NAND Flash Memory and can be considered as alternatives based on specific requirements and availability.

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