MT29F256G08CECCBH6-6ITR:C

Product Overview

Category

MT29F256G08CECCBH6-6ITR:C belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CECCBH6-6ITR:C offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F256G08CECCBH6-6ITR:C is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F256G08CECCBH6-6ITR:C is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on the customer's requirements.

Specifications

• Memory type: NAND flash
• Storage capacity: 256 GB
• Interface: Universal Flash Storage (UFS)
• Operating voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Package dimensions: 14mm x 18mm x 1.2mm

Detailed Pin Configuration

The MT29F256G08CECCBH6-6ITR:C has a total of 48 pins. The pin configuration is as follows:

1. VCCQ
2. VCC
3. GND
4. RE#
5. WE#
6. CLE
7. ALE
8. CE#
9. R/B#
10. DQS
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page-based architecture: The MT29F256G08CECCBH6-6ITR:C utilizes a page-based architecture, allowing for efficient data programming and erasing.
• Error correction code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes a mechanism to manage and mark bad blocks, preventing their use and maintaining overall system reliability.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption is beneficial for battery-powered devices.
• Compact package allows integration into small-sized electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.

Working Principles

The MT29F256G08CECCBH6-6ITR:C operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, each consisting of a floating-gate transistor. Data is stored by trapping electric charges in the floating gate, representing binary values (0s and 1s). The presence or absence of charges determines the state of each memory cell.

During read operations, the controller applies appropriate voltages to the selected memory cells, allowing the charges to be sensed and interpreted as data. Write operations involve applying specific voltages to program or erase the memory cells, altering the charge levels in the floating gates.

Detailed Application Field Plans

The MT29F256G08CECCBH6-6ITR:C finds extensive application in various electronic devices that require high-capacity