MT29F256G08CMCGBJ4-37ES:G TR

Product Overview

Category

MT29F256G08CMCGBJ4-37ES:G TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08CMCGBJ4-37ES:G TR offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced technology, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product ensures reliable performance with its robust design and built-in error correction mechanisms.
• Low power consumption: The MT29F256G08CMCGBJ4-37ES:G TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F256G08CMCGBJ4-37ES:G TR is typically packaged in a surface mount package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 256 gigabytes (GB)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: Surface Mount
• Package Dimensions: [Insert dimensions here]

Detailed Pin Configuration

The pin configuration of the MT29F256G08CMCGBJ4-37ES:G TR is as follows:

1. VCC - Power Supply
2. GND - Ground
3. CE# - Chip Enable
4. RE# - Read Enable
5. WE# - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ7 - Data Input/Output
8. R/B# - Ready/Busy Status
9. CLE - Command Latch Enable
10. ALE - Address Latch Enable
11. WP# - Write Protect
12. RST# - Reset

Please refer to the product datasheet for a more detailed pin configuration diagram.

Functional Features

• High-speed data transfer: The MT29F256G08CMCGBJ4-37ES:G TR offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear-leveling algorithm: This NAND flash memory utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
• Bad block management: The product includes a bad block management system that identifies and isolates defective blocks, preventing data loss.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Relatively higher cost compared to other storage technologies
• Limited endurance (number of program/erase cycles)

Working Principles

The MT29F256G08CMCGBJ4-37ES:G TR is based on NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When a voltage is applied, the trapped electrons can be read or erased, allowing for data storage and retrieval.

Detailed Application Field Plans

The MT29F256G08CMCGBJ4-37ES:G TR is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F256G08CMCGBJ4-37ES:G TR include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F256G08CBABA

These alternative models offer similar storage capacities and functionalities, providing options for different application requirements.

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