MT29F2G01ABAGDSF-AAT:G TR

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Surface Mount Technology (SMT) package
Essence: Non-volatile memory
Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Model Number: MT29F2G01ABAGDSF-AAT:G TR
• Memory Type: NAND Flash
• Capacity: 2GB
• Interface: Parallel
• Operating Voltage: 3.3V
• Access Time: 25 ns
• Operating Temperature: -40°C to +85°C
• Package Type: 48-ball FBGA
• RoHS Compliant: Yes

Detailed Pin Configuration

The MT29F2G01ABAGDSF-AAT:G TR has a 48-ball Fine-Pitch Ball Grid Array (FBGA) package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. VSS
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. VSS
45. VSS
46. NC
47. NC
48. VCC

Functional Features

• High-speed data transfer
• Reliable and durable non-volatile memory
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block erase and program operations

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access speed - Low power consumption - Compact package size - RoHS compliant

Disadvantages: - Limited write endurance - Relatively higher cost compared to other memory technologies

Working Principles

The MT29F2G01ABAGDSF-AAT:G TR is based on NAND Flash technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The memory cells are made up of floating-gate transistors that can retain their stored charge even when power is removed. This makes the memory non-volatile, meaning it retains data even when the device is powered off.

To read data from the memory, the appropriate address is provided, and the stored charge in the selected memory cell is sensed. To write data, the memory cell is programmed by applying a voltage to the control gate and trapping charge in the floating gate. Erasing data involves removing the trapped charge from the floating gate, making the cell ready for reprogramming.

Detailed Application Field Plans

The MT29F2G01ABAGDSF-AAT:G TR is widely used in various electronic devices and systems that require non-volatile data storage. Some common application fields include:

1. Solid-state drives (SSDs)
2. USB flash drives
3. Embedded systems
4. Industrial automation
5. Automotive electronics
6. Consumer electronics

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT:G TR
2. MT29F2G16ABDWP-IT:G TR
3. MT29F2G32ABDEAWP-IT:G TR
4. MT29F2G64ABDEAWP-IT:G TR
5. MT29F2G128ABDEAWP-IT:G TR

These alternative models offer different capacities, package types, and features to suit specific application requirements.

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