MT29F2G08ABAGAH4-ITE:G TR

Product Overview

Category

MT29F2G08ABAGAH4-ITE:G TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G08ABAGAH4-ITE:G TR offers a storage capacity of 2 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
• Low power consumption: The MT29F2G08ABAGAH4-ITE:G TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Packaging/Quantity

The MT29F2G08ABAGAH4-ITE:G TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels containing a specific quantity, usually ranging from hundreds to thousands of units per reel.

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

1. VCC
2. GND
3. ALE (Address Latch Enable)
4. CLE (Command Latch Enable)
5. CE# (Chip Enable)
6. RE# (Read Enable)
7. WE# (Write Enable)
8. R/B# (Ready/Busy)
9. WP# (Write Protect)
10. NC (No Connection)
11. NC
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read/Program/Erase: The MT29F2G08ABAGAH4-ITE:G TR supports page-level read, program, and erase operations, allowing for efficient data manipulation.
• Block Management: It incorporates advanced block management techniques to optimize performance and extend the lifespan of the memory cells.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-Leveling: The product employs wear-leveling algorithms to evenly distribute write and erase operations across memory blocks, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package
• RoHS compliant

Disadvantages

• Limited pin count for additional functionalities
• Higher cost compared to lower-capacity NAND flash memory options

Working Principles

The MT29F2G08ABAGAH4-ITE:G TR operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells, where data is stored by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be read, programmed, or erased using specific electrical signals.

Detailed Application Field Plans

The MT29F2G08ABAGAH4-ITE:G TR finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F2G16ABAEAWP-IT:E - 2GB NAND Flash Memory, TSOP package, 48-pin configuration. 2