MT29F2G08ABBFAH4-IT:F

Product Overview

Category

MT29F2G08ABBFAH4-IT:F belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G08ABBFAH4-IT:F offers a storage capacity of 2 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F2G08ABBFAH4-IT:F is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F2G08ABBFAH4-IT:F is typically packaged in a surface-mount technology (SMT) package. The exact packaging type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. CLE - Command latch enable
5. ALE - Address latch enable
6. CE - Chip enable
7. RE - Read enable
8. WE - Write enable
9. R/B# - Ready/Busy status
10. DQ0-DQ15 - Data input/output

(Note: The pin configuration may vary depending on the specific manufacturer's implementation.)

Functional Features

• High-speed data transfer: The MT29F2G08ABBFAH4-IT:F supports fast read and write operations, enabling efficient data access.
• Error correction: Advanced error correction techniques ensure data integrity and reliability.
• Wear-leveling algorithm: This feature evenly distributes data writes across memory blocks, extending the product's lifespan.
• Bad block management: The NAND flash memory automatically detects and manages bad blocks, enhancing overall performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Susceptible to data loss: Sudden power loss during write operations can lead to data corruption or loss.

Working Principles

The MT29F2G08ABBFAH4-IT:F utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge applied to it. When reading data, the stored charges are measured to determine the stored information. During write operations, the charges are adjusted to represent the desired data.

Detailed Application Field Plans

The MT29F2G08ABBFAH4-IT:F is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Used for storing photos and videos captured by the camera.
3. Solid-state drives (SSDs): Used as primary storage in computers and laptops, providing fast boot times and data access.

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT:E
2. MT29F2G08ABBDAH4-IT:D
3. MT29F2G08ABBEAH4-IT:E
4. MT29F2G08ABBEAWP-IT:E
5. MT29F2G08ABBEAH4-ITE:E

(Note: The list of alternative models may vary depending on the specific manufacturer's offerings.)

In conclusion, the MT29F2G08ABBFAH4-IT:F is a NAND flash memory product that offers high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and provides an efficient solution for non-volatile data storage.