MT29F2T08CVCCBG6-6R:C

Product Overview

Category

MT29F2T08CVCCBG6-6R:C belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F2T08CVCCBG6-6R:C is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

This product is typically packaged in trays or reels, with each containing a specific quantity of NAND flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: MT29F2T08CVCCBG6-6R:C
• Memory Type: NAND Flash
• Capacity: 2 Terabytes (TB)
• Interface: Universal Flash Storage (UFS)
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 600 Megabytes per second (MB/s)
• Endurance: Up to 1,000,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of MT29F2T08CVCCBG6-6R:C is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ15 - Data Inputs/Outputs
8. R/B - Ready/Busy Status

Functional Features

• High-speed data transfer
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block management for efficient data organization
• Bad block management for improved reliability

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Compact size
• Reliable data storage

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance compared to some alternative models

Working Principles

MT29F2T08CVCCBG6-6R:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells can be electrically programmed and erased, allowing for non-volatile data storage. The data is accessed by sending specific commands and addresses to the memory chip, which retrieves the stored information.

Detailed Application Field Plans

MT29F2T08CVCCBG6-6R:C finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable data storage in computers and servers. 4. Automotive electronics for data logging and infotainment systems. 5. Industrial equipment for storing firmware and configuration data.

Detailed and Complete Alternative Models

Some alternative models to MT29F2T08CVCCBG6-6R:C include: 1. Samsung K9GAG08U0E 2. Toshiba TH58NVG7D2FLA89 3. Micron MT29F2G08ABAEA

These models offer similar functionality and can be used as alternatives depending on specific requirements and availability.

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