MT29F512G08AUEBBH8-12:B TR

Product Overview

Category

MT29F512G08AUEBBH8-12:B TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08AUEBBH8-12:B TR offers a storage capacity of 512 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: The product is designed to consume minimal power, making it suitable for portable devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F512G08AUEBBH8-12:B TR is typically packaged in a surface-mount package (SMD) and is available in different quantities depending on the manufacturer's specifications.

Specifications

• Model: MT29F512G08AUEBBH8-12:B TR
• Storage Capacity: 512 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Package Type: Surface Mount Device (SMD)

Detailed Pin Configuration

The MT29F512G08AUEBBH8-12:B TR has a specific pin configuration that allows for proper connectivity and functionality within a circuit. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground connection
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output lines
10. NC: No connection

Functional Features

The MT29F512G08AUEBBH8-12:B TR offers several functional features that enhance its performance and usability:

1. High-speed data transfer: The NAND flash memory technology allows for fast read and write operations, enabling quick data access.
2. Error correction: The product incorporates error correction techniques to ensure data integrity and reliability.
3. Wear-leveling algorithm: It employs a wear-leveling algorithm to distribute data evenly across memory cells, extending the lifespan of the device.
4. Bad block management: The NAND flash memory includes mechanisms to manage and isolate defective blocks, preventing data loss.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Relatively higher cost compared to other storage options
• Limited endurance due to the finite number of program/erase cycles

Working Principles

The MT29F512G08AUEBBH8-12:B TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These memory cells consist of floating-gate transistors that can retain charge even when power is removed. To store data, electrical charges are applied to specific memory cells, altering their state and representing binary information (0s and 1s). Reading data involves detecting the charge level in each memory cell, while writing data requires applying precise voltage levels to modify the charge state.

Detailed Application Field Plans

The MT29F512G08AUEBBH8-12:B TR is widely used in various electronic devices and applications, including:

1. Smartphones and tablets: It provides high-capacity storage for multimedia files, applications, and operating systems.
2. Digital cameras: The product enables storing a large number of high-resolution photos and videos.
3. Solid-state drives (SSDs): It serves as the primary storage medium in SSDs, offering fast data access and improved system performance.
4. Industrial automation: The NAND flash memory finds application in industrial control systems, providing reliable and durable storage for critical data.
5. Automotive electronics: It is utilized in automotive infotainment systems, navigation units, and other embedded applications that require high-capacity storage.

Detailed and Complete Alternative Models

1. MT29F512G08AUEBBH8-12:B
2. MT29F512G08AUEBBH8-12:C
3. MT29F512G08AUEBBH8-12:D
4. MT29F512G08AUE