MT29F512G08EMCBBJ5-10:B TR

Product Overview

Category

MT29F512G08EMCBBJ5-10:B TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08EMCBBJ5-10:B TR offers a storage capacity of 512 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer speed: With a read speed of up to 100 megabytes per second (MB/s) and a write speed of up to 50 MB/s, this NAND flash memory provides efficient data transfer.
• Reliable performance: The product is designed to withstand frequent read/write operations and has a high endurance rating, ensuring long-term reliability.
• Compact package: The MT29F512G08EMCBBJ5-10:B TR comes in a small form factor, making it suitable for integration into compact electronic devices.
• Low power consumption: This NAND flash memory consumes minimal power, contributing to energy efficiency in portable devices.

Package and Quantity

The MT29F512G08EMCBBJ5-10:B TR is available in a surface-mount package. It is typically sold in reels containing a specified quantity of units, commonly 1000 pieces per reel.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F512G08EMCBBJ5-10:B TR
• Memory Type: NAND Flash
• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 153-ball VFBGA

Pin Configuration

The detailed pin configuration of the MT29F512G08EMCBBJ5-10:B TR is as follows:

1. VCCQ (Power Supply)
2. VCC (Power Supply)
3. RST_N (Reset)
4. CLK (Clock)
5. CMD (Command)
6. D0-D7 (Data I/O)
7. WP_N (Write Protect)
8. RE_N (Read Enable)
9. CLE (Command Latch Enable)
10. ALE (Address Latch Enable)
11. CE_N (Chip Enable)
12. RB_N (Ready/Busy)

Note: The above pin configuration is a simplified representation and may vary depending on the specific package variant.

Functional Features

• Error Correction Code (ECC): The MT29F512G08EMCBBJ5-10:B TR incorporates advanced ECC algorithms to ensure data integrity and minimize errors during read/write operations.
• Wear Leveling: This NAND flash memory utilizes wear leveling techniques to distribute write operations evenly across memory cells, extending the overall lifespan of the device.
• Bad Block Management: The product includes a built-in bad block management system that identifies and isolates defective blocks, preventing them from being used for data storage.
• Data Protection: The MT29F512G08EMCBBJ5-10:B TR employs various mechanisms such as power loss protection and data scrambling to safeguard stored data against potential corruption or unauthorized access.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer speeds enhance overall performance.
• Reliable performance ensures long-term usability.
• Compact form factor facilitates integration into various devices.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with older devices that do not support UFS interface.

Working Principles

The MT29F512G08EMCBBJ5-10:B TR operates based on the principles of NAND flash memory technology. It utilizes a grid-like structure of memory cells, where data is stored by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be read or written by applying appropriate voltage levels to the control pins.

Application Field Plans

The MT29F512G08EMCBBJ5-10:B TR finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

For users seeking alternative models with similar specifications and functionality, the following NAND flash memory products can be considered: - Samsung K9K8G08U0B - Toshiba TH58NVG6D2FLA89 - SK Hynix H