MT29F64G08CBCGBSX-37B:G TR

Product Overview

Category

The MT29F64G08CBCGBSX-37B:G TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBCGBSX-37B:G TR offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory chip enables high-speed data transfer, ensuring efficient performance.
• Reliable and durable: The product is designed to withstand frequent read and write operations, making it highly reliable and durable.
• Low power consumption: The MT29F64G08CBCGBSX-37B:G TR is energy-efficient, consuming minimal power during operation.

Package and Quantity

This product is packaged in a compact form factor, typically in a surface-mount technology (SMT) package. It is available in various quantities, depending on the specific requirements of the customer or application.

Essence

The MT29F64G08CBCGBSX-37B:G TR is an essential component in modern electronic devices, providing crucial data storage capabilities.

Specifications

• Memory Type: NAND Flash
• Capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Pin Count: 48

Detailed Pin Configuration

The MT29F64G08CBCGBSX-37B:G TR has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP: Write protect
12. RP: Reset/power down

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed data transfer: The MT29F64G08CBCGBSX-37B:G TR offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: This NAND flash memory chip incorporates advanced error correction techniques to ensure data integrity and reliability.
• Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the chip.
• Bad block management: It includes mechanisms to identify and manage defective blocks, preventing data loss and maintaining overall performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable and durable
• Low power consumption
• Compact form factor

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (compared to NOR flash)

Working Principles

The MT29F64G08CBCGBSX-37B:G TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data using charge trapping principles. When reading or writing data, electrical signals are applied to specific pins to access the desired memory location.

Detailed Application Field Plans

The MT29F64G08CBCGBSX-37B:G TR finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F64G08CBABA:G TR
2. MT29F64G08CBACAWP-IT:G TR
3. MT29F64G08CBACAWP:A TR
4. MT29F64G08CBACAWP-IT:A TR
5. MT29F64G08CBACAWP-IT:C TR

(Note: The list above includes only a few alternative models for reference.)

In conclusion, the MT29F64G08CBCGBSX-37B:G TR is a high-capacity NAND flash memory chip widely used in various electronic devices. Its fast data transfer rate, reliability, and low power consumption make it an essential component in modern technology. While it has certain disadvantages such as higher cost and limited endurance, its advantages outweigh these limitations. With its detailed pin configuration, functional features,