MT29F64G08CBCGBWP-10ES:G TR

Product Overview

Category

The MT29F64G08CBCGBWP-10ES:G TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08CBCGBWP-10ES:G TR offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With a speed rating of 10 nanoseconds (ns), this NAND flash memory chip enables quick read and write operations.
• Reliable performance: It provides reliable data retention and endurance, ensuring the integrity of stored information.
• Compact package: The MT29F64G08CBCGBWP-10ES:G TR comes in a small form factor, making it suitable for space-constrained electronic devices.
• RoHS compliant: This product adheres to the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness.

Package and Quantity

The MT29F64G08CBCGBWP-10ES:G TR is packaged in a surface-mount ball grid array (BGA) package. Each package contains one NAND flash memory chip.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F64G08CBCGBWP-10ES:G TR
• Memory Type: NAND Flash
• Storage Capacity: 64 GB
• Speed Rating: 10 ns
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA
• Package Dimensions: 14mm x 18mm
• RoHS Compliant: Yes

Detailed Pin Configuration

The MT29F64G08CBCGBWP-10ES:G TR has a total of 48 pins. The pin configuration is as follows:

1. VCC (Power Supply)
2. VCCQ (Power Supply for I/O)
3. WE# (Write Enable)
4. CLE (Command Latch Enable)
5. ALE (Address Latch Enable)
6. CE# (Chip Enable)
7. RE# (Read Enable)
8. R/B# (Ready/Busy)
9. WP# (Write Protect)
10. NC (No Connection)
11. NC (No Connection)
12. NC (No Connection)
13. NC (No Connection)
14. NC (No Connection)
15. NC (No Connection)
16. NC (No Connection)
17. NC (No Connection)
18. NC (No Connection)
19. NC (No Connection)
20. NC (No Connection)
21. NC (No Connection)
22. NC (No Connection)
23. NC (No Connection)
24. NC (No Connection)
25. NC (No Connection)
26. NC (No Connection)
27. NC (No Connection)
28. NC (No Connection)
29. NC (No Connection)
30. NC (No Connection)
31. NC (No Connection)
32. NC (No Connection)
33. NC (No Connection)
34. NC (No Connection)
35. NC (No Connection)
36. NC (No Connection)
37. NC (No Connection)
38. NC (No Connection)
39. NC (No Connection)
40. NC (No Connection)
41. NC (No Connection)
42. NC (No Connection)
43. NC (No Connection)
44. NC (No Connection)
45. NC (No Connection)
46. NC (No Connection)
47. NC (No Connection)
48. GND (Ground)

Functional Features

• High-speed data transfer: The MT29F64G08CBCGBWP-10ES:G TR offers fast read and write speeds, allowing for efficient data access and storage.
• Error correction: This NAND flash memory chip incorporates error correction techniques to ensure data integrity and reliability.
• Wear leveling: It employs wear leveling algorithms to distribute data evenly across memory cells, preventing premature cell failure and extending the lifespan of the chip.
• Block management: The chip's firmware manages memory blocks, enabling efficient data organization and retrieval.
• Bad block management: The MT29F64G08CBCGBWP-10ES:G TR includes mechanisms to identify and manage bad blocks, ensuring optimal performance.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Compact form factor
• RoHS compliant

Disadvantages

• Limited compatibility with certain devices due to the parallel interface
• Relatively higher power consumption compared to newer NAND flash technologies