قد تكون الصورة تمثيلية.
راجع المواصفات للحصول على تفاصيل المنتج.
MT29F64G08CBEBBL84A3WC1

MT29F64G08CBEBBL84A3WC1

Basic Information Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile
    • High capacity
    • Reliable performance
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory chip
  • Packaging/Quantity: Single chip

Specifications

  • Capacity: 64GB
  • Interface: NAND Flash
  • Organization: 8Gb x 8
  • Voltage Supply: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Speed: Up to 50MB/s (Read), up to 20MB/s (Write)

Detailed Pin Configuration

The MT29F64G08CBEBBL84A3WC1 has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

  1. VCC
  2. VCCQ
  3. GND
  4. RE#
  5. WE#
  6. CLE
  7. ALE
  8. CE#
  9. R/B#
  10. WP#
  11. NC
  12. NC
  13. NC
  14. NC
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data transfer
  • Error correction capability
  • Wear-leveling algorithm for extended lifespan
  • Block management for efficient storage utilization
  • Power-saving features

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Non-volatile memory retains data even without power
  • Fast read and write speeds
  • Reliable performance and durability
  • Low power consumption

Disadvantages

  • Limited write endurance compared to other memory technologies
  • Higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F64G08CBEBBL84A3WC1 is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can hold multiple bits of information, allowing for high-density storage. The data is stored by trapping electric charges within the memory cells, which can be read or written using specific voltage levels.

Detailed Application Field Plans

The MT29F64G08CBEBBL84A3WC1 is widely used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - USB flash drives - Memory cards (SD, microSD, etc.) - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

  • MT29F64G08CBEBBL84A3WC2
  • MT29F64G08CBEBBL84A3WC3
  • MT29F64G08CBEBBL84A3WC4
  • MT29F64G08CBEBBL84A3WC5

These alternative models offer similar specifications and functionality, providing options for different application requirements.

Word count: 330 words

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MT29F64G08CBEBBL84A3WC1 في الحلول التقنية

Sure! Here are 10 common questions and answers related to the application of MT29F64G08CBEBBL84A3WC1 in technical solutions:

Q1: What is MT29F64G08CBEBBL84A3WC1? A1: MT29F64G08CBEBBL84A3WC1 is a specific model of NAND flash memory chip manufactured by Micron Technology.

Q2: What is the storage capacity of MT29F64G08CBEBBL84A3WC1? A2: MT29F64G08CBEBBL84A3WC1 has a storage capacity of 64 gigabits (8 gigabytes).

Q3: What is the interface used by MT29F64G08CBEBBL84A3WC1? A3: MT29F64G08CBEBBL84A3WC1 uses a standard NAND flash interface.

Q4: What are some typical applications of MT29F64G08CBEBBL84A3WC1? A4: MT29F64G08CBEBBL84A3WC1 is commonly used in various electronic devices such as smartphones, tablets, solid-state drives (SSDs), and embedded systems.

Q5: What is the operating voltage range of MT29F64G08CBEBBL84A3WC1? A5: MT29F64G08CBEBBL84A3WC1 operates at a voltage range of 2.7V to 3.6V.

Q6: What is the data transfer rate of MT29F64G08CBEBBL84A3WC1? A6: The data transfer rate of MT29F64G08CBEBBL84A3WC1 depends on the specific implementation and interface used, but it can typically achieve high-speed data transfers.

Q7: Does MT29F64G08CBEBBL84A3WC1 support wear-leveling and error correction? A7: Yes, MT29F64G08CBEBBL84A3WC1 supports wear-leveling algorithms and error correction codes (ECC) to enhance reliability and extend the lifespan of the memory.

Q8: Can MT29F64G08CBEBBL84A3WC1 be used in industrial environments? A8: Yes, MT29F64G08CBEBBL84A3WC1 is designed to withstand harsh operating conditions and is suitable for use in industrial environments.

Q9: Is MT29F64G08CBEBBL84A3WC1 compatible with different operating systems? A9: Yes, MT29F64G08CBEBBL84A3WC1 is compatible with various operating systems, including Windows, Linux, and embedded operating systems.

Q10: Are there any specific considerations for integrating MT29F64G08CBEBBL84A3WC1 into a technical solution? A10: It is important to ensure proper power supply, signal integrity, and adherence to the manufacturer's guidelines for optimal performance and reliability when integrating MT29F64G08CBEBBL84A3WC1 into a technical solution.

Please note that the answers provided here are general and may vary depending on the specific implementation and requirements of your technical solution.