MT49H8M36SJ-25E:B

Product Overview

Category

MT49H8M36SJ-25E:B belongs to the category of memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Wide operating temperature range

Package

MT49H8M36SJ-25E:B is available in a compact and durable package, designed to protect the memory module from external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage solutions for various electronic applications.

Packaging/Quantity

MT49H8M36SJ-25E:B is typically packaged individually or in bulk quantities, depending on the customer's requirements.

Specifications

• Model: MT49H8M36SJ-25E:B
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 8 gigabits (1 gigabyte)
• Speed: 25 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Interface: Double Data Rate 3 (DDR3)
• Pin Count: 96 pins
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The detailed pin configuration of MT49H8M36SJ-25E:B is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDD
20. VSS
21. DQ16
22. DQ17
23. DQ18
24. DQ19
25. DQ20
26. DQ21
27. DQ22
28. DQ23
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VSS
38. VDD
39. VSS
40. A0
41. A1
42. A2
43. A3
44. A4
45. A5
46. A6
47. A7
48. A8
49. A9
50. A10
51. A11
52. A12
53. A13
54. A14
55. A15
56. A16
57. A17
58. A18
59. A19
60. A20
61. A21
62. A22
63. A23
64. A24
65. A25
66. A26
67. A27
68. A28
69. A29
70. A30
71. A31
72. VSS
73. VDD
74. VSS
75. BA0
76. BA1
77. RAS#
78. CAS#
79. WE#
80. CS#
81. CK
82. CK#
83. CKE
84. ODT
85. RESET#
86. VREFCA
87. VSS
88. VDD
89. VSS
90. DQS0#
91. DQS1#
92. DM0
93. DM1
94. VSS
95. VDD
96. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable performance in extreme temperatures
• Support for error correction

Disadvantages

• Higher cost compared to other memory options
• Limited compatibility with older devices

Working Principles

MT49H8M36SJ-25E:B operates based on the principles of synchronous dynamic random-access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the device it is connected to. The memory cells store data in a digital format, allowing for quick and efficient read and write operations.

Detailed Application