MT53D1G64D8NZ-046 WT ES:E

Product Overview

Category

The MT53D1G64D8NZ-046 WT ES:E belongs to the category of computer memory modules.

Use

It is primarily used as a RAM (Random Access Memory) module in computers and other electronic devices.

Characteristics

• Capacity: 1GB
• Type: DDR3 SDRAM
• Speed: 1333 MHz
• Form Factor: DIMM 240-pin
• Voltage: 1.5V
• Error Checking: Non-ECC
• CAS Latency: CL9
• Rank: Single rank
• Organization: 8 banks x 8 bits
• Refresh: Auto-refresh and self-refresh

Package

The MT53D1G64D8NZ-046 WT ES:E comes in a standard DIMM package, which is a rectangular module with 240 pins.

Essence

This memory module is designed to provide fast and efficient data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The MT53D1G64D8NZ-046 WT ES:E is typically packaged individually or in bulk quantities, depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1GB
• Speed: 1333 MHz
• Form Factor: DIMM 240-pin
• Voltage: 1.5V
• Error Checking: Non-ECC
• CAS Latency: CL9
• Rank: Single rank
• Organization: 8 banks x 8 bits
• Refresh: Auto-refresh and self-refresh

Detailed Pin Configuration

The MT53D1G64D8NZ-046 WT ES:E has a total of 240 pins arranged in a specific configuration. The pin configuration is as follows:

(Pin Number - Function) 1 - VDD 2 - DQ0 3 - DQ1 4 - DQ2 5 - DQ3 6 - DQ4 7 - DQ5 8 - DQ6 9 - DQ7 10 - VSS 11 - NC 12 - DQ8 13 - DQ9 14 - DQ10 15 - DQ11 16 - DQ12 17 - DQ13 18 - DQ14 19 - DQ15 20 - VSS ... (Continued for all 240 pins)

Functional Features

• High-speed data transfer: The MT53D1G64D8NZ-046 WT ES:E offers a high-speed data transfer rate of 1333 MHz, allowing for quick and efficient processing of data.
• Low power consumption: This memory module operates at a voltage of 1.5V, resulting in low power consumption and improved energy efficiency.
• Non-ECC error checking: The module does not support Error Correcting Code (ECC) error checking, making it suitable for applications where ECC is not required.
• Auto-refresh and self-refresh: The MT53D1G64D8NZ-046 WT ES:E supports auto-refresh and self-refresh functions, ensuring the integrity of stored data.

Advantages and Disadvantages

Advantages

• Fast data transfer rate
• Low power consumption
• Cost-effective solution
• Compact form factor

Disadvantages

• Limited capacity (1GB)
• Lack of ECC error checking

Working Principles

The MT53D1G64D8NZ-046 WT ES:E operates based on DDR3 SDRAM technology. It stores data in an array of capacitors within the module. When a read or write operation is performed, the data is accessed by sending electrical signals through the appropriate pins. The module's controller manages the data transfer and refresh operations to ensure reliable performance.

Detailed Application Field Plans

The MT53D1G64D8NZ-046 WT ES:E is commonly used in various electronic devices, including: - Desktop computers - Laptops - Servers - Workstations - Gaming consoles - Embedded systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to the MT53D1G64D8NZ-046 WT ES:E include: - MT53B256M32D2NP-046 WT ES:E (256MB capacity) - MT53E512M64D4NP-046 WT ES:E (512MB capacity) - MT53F1G32D4NP-046 WT ES:E (2GB capacity) - MT53G2G64D8NP-046 WT ES:E (4GB capacity)

These alternative models offer different capacities and specifications to cater to varying requirements.

Word count: 529 words