Micron Technology Inc.
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MT53D384M64D4NY-046 XT ES:D

MT53D384M64D4NY-046 XT ES:D

Product Overview

Category

MT53D384M64D4NY-046 XT ES:D belongs to the category of electronic memory devices.

Use

This product is primarily used for data storage and retrieval in various electronic systems.

Characteristics

  • High storage capacity
  • Fast data access speed
  • Low power consumption
  • Compact package size
  • Reliable performance

Package

MT53D384M64D4NY-046 XT ES:D is packaged in a compact and durable casing, ensuring protection against external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve large amounts of data quickly and efficiently.

Packaging/Quantity

Each package of MT53D384M64D4NY-046 XT ES:D contains a single unit of the memory device.

Specifications

  • Model: MT53D384M64D4NY-046 XT ES:D
  • Storage Capacity: 384 megabytes (MB)
  • Memory Type: Dynamic Random Access Memory (DRAM)
  • Interface: XT ES:D
  • Operating Voltage: 3.3 volts (V)
  • Data Transfer Rate: Up to 1600 megabits per second (Mbps)
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of MT53D384M64D4NY-046 XT ES:D is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. VDD
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. A20
  41. A21
  42. A22
  43. A23
  44. A24
  45. A25
  46. A26
  47. A27
  48. A28
  49. A29
  50. A30
  51. A31
  52. BA0
  53. BA1
  54. RAS#
  55. CAS#
  56. WE#
  57. CKE
  58. CS#
  59. DM0
  60. DM1
  61. DQS0
  62. DQS1
  63. DQS2
  64. DQS3
  65. DQS4
  66. DQS5
  67. DQS6
  68. DQS7
  69. DQS8
  70. DQS9
  71. DQS10
  72. DQS11
  73. DQS12
  74. DQS13
  75. DQS14
  76. DQS15
  77. VREFCA
  78. VREFDQ
  79. VSS

Functional Features

  • High-speed data access
  • Low latency
  • Error correction capabilities
  • Power-saving modes
  • Self-refresh functionality
  • On-die termination (ODT) support

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Low power consumption
  • Compact package size
  • Reliable performance
  • Error correction capabilities

Disadvantages

  • Relatively higher cost compared to other memory devices
  • Limited compatibility with certain systems

Working Principles

MT53D384M64D4NY-046 XT ES:D operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, which are constantly refreshed to maintain the stored information. When data needs to be accessed, the memory controller sends appropriate signals to retrieve the desired information.

Detailed Application Field Plans

MT53D384M64D4NY-046 XT ES:D finds applications in various electronic systems, including but not limited to: 1. Personal computers 2. Laptops 3. Servers 4. Networking equipment 5. Mobile devices 6. Automotive electronics 7. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT53D384M64D4

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MT53D384M64D4NY-046 XT ES:D في الحلول التقنية

Sure! Here are 10 common questions and answers related to the application of MT53D384M64D4NY-046 XT ES:D in technical solutions:

  1. Q: What is the capacity of the MT53D384M64D4NY-046 XT ES:D memory module? A: The MT53D384M64D4NY-046 XT ES:D has a capacity of 384 megabytes (MB).

  2. Q: What is the speed rating of this memory module? A: The MT53D384M64D4NY-046 XT ES:D operates at a speed of DDR4-3200.

  3. Q: Is the MT53D384M64D4NY-046 XT ES:D compatible with both desktop and laptop systems? A: Yes, this memory module is compatible with both desktop and laptop systems.

  4. Q: Can I use multiple MT53D384M64D4NY-046 XT ES:D modules together for increased memory capacity? A: Yes, you can install multiple modules to increase the overall memory capacity of your system.

  5. Q: Does the MT53D384M64D4NY-046 XT ES:D support ECC (Error-Correcting Code) functionality? A: No, this memory module does not support ECC functionality.

  6. Q: What voltage does the MT53D384M64D4NY-046 XT ES:D operate at? A: This memory module operates at a standard voltage of 1.2 volts.

  7. Q: Can I overclock the MT53D384M64D4NY-046 XT ES:D for higher performance? A: Overclocking capabilities may vary depending on the specific system and motherboard. Please refer to your system's documentation for more information.

  8. Q: Is the MT53D384M64D4NY-046 XT ES:D compatible with both Intel and AMD processors? A: Yes, this memory module is compatible with both Intel and AMD processors.

  9. Q: Does the MT53D384M64D4NY-046 XT ES:D have any built-in heat spreaders for better thermal management? A: No, this memory module does not come with built-in heat spreaders.

  10. Q: What is the warranty period for the MT53D384M64D4NY-046 XT ES:D memory module? A: The warranty period for this memory module may vary depending on the manufacturer. Please refer to the product documentation or contact the manufacturer for warranty details.

Please note that the answers provided here are general and may vary based on specific product variations or manufacturer specifications.