N25Q128A13EV740

Basic Information Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval
• Characteristics:
  • High-speed performance
  • Large storage capacity
  • Low power consumption
• Package: SOP (Small Outline Package)
• Essence: Flash memory chip
• Packaging/Quantity: Individually packaged, quantity varies based on manufacturer

Specifications

• Capacity: 128 Megabits (16 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Time: Varies based on operation mode
• Data Retention: Up to 20 years

Detailed Pin Configuration

The N25Q128A13EV740 has a total of 8 pins. The pin configuration is as follows:

1. Chip Select (/CS) - Used to enable or disable the device
2. Serial Clock (SCLK) - Provides the clock signal for data transfer
3. Serial Data Input (SI) - Receives data from the host
4. Serial Data Output (SO) - Transmits data to the host
5. Hold (/HOLD) - Suspends ongoing operations temporarily
6. Write Protect (/WP) - Protects the memory against write operations
7. Ground (GND) - Reference ground for the device
8. Power Supply (VCC) - Power input for the device

Functional Features

• High-speed Read/Write operations
• Sector erase and byte/page program functions
• Advanced security features like hardware protection and password access
• Efficient power management with deep power-down mode
• Flexible architecture supporting multiple read modes and burst modes

Advantages and Disadvantages

Advantages

• Fast data transfer rates
• Large storage capacity
• Low power consumption
• Enhanced security features
• Compact package size

Disadvantages

• Limited endurance (number of erase/write cycles)
• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The N25Q128A13EV740 is based on the NAND flash memory technology. It utilizes a grid of memory cells, where each cell can store multiple bits of information. The data is stored by trapping electric charges within the floating gate of each memory cell. These charges represent the binary values of the stored data.

During read operations, the charges are measured to determine the stored data. For write and erase operations, high voltages are applied to modify the charge levels within the cells. The SPI interface allows for easy communication between the host device and the memory chip.

Detailed Application Field Plans

The N25Q128A13EV740 is widely used in various electronic devices that require non-volatile memory for data storage and retrieval. Some common application fields include: - Consumer electronics (smartphones, tablets, digital cameras) - Automotive systems (infotainment, navigation, instrument clusters) - Industrial equipment (data loggers, control systems, robotics) - Networking devices (routers, switches, modems) - Medical devices (patient monitoring, diagnostic equipment)

Detailed and Complete Alternative Models

• N25Q256A13EF840: 256 Megabit (32 Megabyte) capacity, similar specifications
• N25Q64A13ESE40: 64 Megabit (8 Megabyte) capacity, lower storage but compatible interface
• N25Q512A13ESE40: 512 Megabit (64 Megabyte) capacity, higher storage option

(Note: The above alternative models are just examples and not an exhaustive list.)

This entry provides an overview of the N25Q128A13EV740 flash memory chip. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models. The N25Q128A13EV740 is a versatile memory solution suitable for various electronic devices requiring high-speed data storage and retrieval capabilities.