M29F080D90N1

Product Overview

Category

M29F080D90N1 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F080D90N1 retains stored data even when power is removed.
• High capacity: This device offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: It provides quick read and write operations, ensuring efficient data transfer.
• Low power consumption: The M29F080D90N1 is designed to consume minimal power during operation.
• Durable: With its robust construction, this memory device can withstand harsh environmental conditions.

Package

The M29F080D90N1 is available in a compact and industry-standard package, making it compatible with various circuit board designs.

Essence

The essence of M29F080D90N1 lies in its ability to reliably store and retrieve digital information, ensuring data integrity and system performance.

Packaging/Quantity

This product is typically packaged in reels or trays, with each containing a specific quantity of M29F080D90N1 devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 8 Megabits (1 Megabyte)
• Supply Voltage: 2.7V - 3.6V
• Access Time:
  • Read: 90 ns
  • Program: 10 μs
  • Erase: 10 ms
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The M29F080D90N1 features a parallel interface with the following pin configuration:

1. VCC: Power Supply
2. A0-A18: Address Inputs
3. DQ0-DQ7: Data Input/Output
4. WE#: Write Enable
5. CE#: Chip Enable
6. OE#: Output Enable
7. RP#/BYTE#: Reset/Byte Mode Select
8. VSS: Ground

Functional Features

• Read Operation: The M29F080D90N1 allows for fast and reliable reading of stored data.
• Program Operation: This device supports programming, enabling users to write new data into the memory.
• Erase Operation: The M29F080D90N1 can be erased, allowing for the removal of previously stored data.
• Protection Mechanism: It includes a protection mechanism to prevent accidental modification or erasure of data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Durable construction
• Reliable data retention

Disadvantages

• Limited write endurance
• Relatively slower erase operation compared to newer memory technologies

Working Principles

The M29F080D90N1 utilizes flash memory technology, which stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s) and can be read, programmed, or erased using specific electrical signals.

Detailed Application Field Plans

The M29F080D90N1 finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial automation - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the M29F080D90N1 include: - M29F080D70N1 - M29F080D120N1 - M29F080D150N1

These models may differ in terms of storage capacity, access time, or package type, providing options to suit specific requirements.

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