IRFI634GPBF

Product Overview

Category

The IRFI634GPBF belongs to the category of power MOSFETs.

Use

It is commonly used in power electronics applications such as power supplies, motor control, and inverters.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed

Package

The IRFI634GPBF is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on supplier and customer requirements.

Specifications

• Drain-Source Voltage (VDS): 250V
• Continuous Drain Current (ID): 9.7A
• RDS(ON) (Max) @ VGS = 10V: 0.6Ω
• Gate-Source Voltage (VGS) ±20V
• Total Power Dissipation (PD): 75W

Detailed Pin Configuration

The IRFI634GPBF has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low gate charge
• Enhanced body diode dv/dt and di/dt capability
• Avalanche energy specified

Advantages

• High voltage capability allows for use in a wide range of applications
• Low on-resistance minimizes power loss and improves efficiency
• Fast switching speed enables high-frequency operation

Disadvantages

• Higher cost compared to standard MOSFETs with lower voltage ratings
• May require additional circuitry for driving the gate due to higher gate-source voltage

Working Principles

The IRFI634GPBF operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Employed in motor drive circuits for precise speed and direction control.
3. Inverters: Utilized in DC to AC converters for various industrial and consumer applications.

Detailed and Complete Alternative Models

1. IRFP250N
2. IRFB4110PBF
3. IRF540NPBF

In conclusion, the IRFI634GPBF is a high-voltage power MOSFET with excellent characteristics suitable for a wide range of power electronics applications. Its fast switching speed and low on-resistance make it an ideal choice for efficient power management and control. While it may have a higher cost and require specific gate driving considerations, its advantages outweigh these limitations in many applications.

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