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SIHB12N65E-GE3
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SIHB12N65E-GE3

Product Overview

Category

The SIHB12N65E-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SIHB12N65E-GE3 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually packaged in reels or tubes and is available in varying quantities based on customer requirements.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 12A
  • On-Resistance (RDS(on)): 0.65Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 18nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB12N65E-GE3 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages

  • Suitable for high-voltage applications
  • Low power dissipation
  • Enhanced system efficiency

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The SIHB12N65E-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is widely used in: - Switched-mode power supplies - Motor drives - Inverters - Power factor correction circuits

Detailed and Complete Alternative Models

  • SIHB12N60E-GE3
  • SIHB12N70E-GE3
  • SIHB12N55E-GE3

In conclusion, the SIHB12N65E-GE3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق SIHB12N65E-GE3 في الحلول التقنية

  1. What is the maximum voltage rating of SIHB12N65E-GE3?

    • The maximum voltage rating of SIHB12N65E-GE3 is 650V.

  2. What is the maximum current rating of SIHB12N65E-GE3?

    • The maximum current rating of SIHB12N65E-GE3 is 12A.

  3. What type of package does SIHB12N65E-GE3 come in?

    • SIHB12N65E-GE3 comes in a TO-220 full pack package.

  4. What are the typical applications for SIHB12N65E-GE3?

    • SIHB12N65E-GE3 is commonly used in motor control, power supplies, and lighting ballasts.

  5. Does SIHB12N65E-GE3 have built-in protection features?

    • Yes, SIHB12N65E-GE3 has built-in overcurrent and thermal protection.

  6. What is the on-state resistance of SIHB12N65E-GE3?

    • The on-state resistance of SIHB12N65E-GE3 is typically 0.35 ohms.

  7. Is SIHB12N65E-GE3 suitable for high-frequency switching applications?

    • Yes, SIHB12N65E-GE3 is designed for high-frequency switching applications.

  8. What is the operating temperature range of SIHB12N65E-GE3?

    • The operating temperature range of SIHB12N65E-GE3 is -55°C to 150°C.

  9. Does SIHB12N65E-GE3 require a heat sink for proper operation?

    • It is recommended to use a heat sink with SIHB12N65E-GE3 for optimal thermal performance.

  10. Can SIHB12N65E-GE3 be used in automotive applications?

    • Yes, SIHB12N65E-GE3 is suitable for automotive applications, such as motor control and power management.