SIHB21N60EF-GE3

Introduction

The SIHB21N60EF-GE3 belongs to the category of power semiconductor devices and is widely used in various electronic applications. This device possesses unique characteristics, packaging, and quantity specifications that make it suitable for a range of industrial and consumer applications.

Basic Information Overview

• Category: Power Semiconductor Device
• Use: Power electronics applications such as motor drives, inverters, and power supplies
• Characteristics: High voltage and current handling capability, low on-state resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power control and management
• Packaging/Quantity: Available in reels of 800 units

Specifications

• Voltage Rating: 600V
• Current Rating: 21A
• On-State Resistance: 0.21Ω
• Gate Threshold Voltage: 2.5V
• Gate Charge: 40nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB21N60EF-GE3 features a standard TO-220AB package with three pins: 1. Pin 1 (Gate): Control terminal for turning the device on and off 2. Pin 2 (Source): Connection to the ground or common reference point 3. Pin 3 (Drain): Output terminal for the controlled power flow

Functional Features

• Fast switching speed for efficient power control
• Low on-state resistance minimizes power losses
• High voltage and current handling capability for robust performance

Advantages and Disadvantages

Advantages: - Efficient power management - Robust construction for reliable operation - Fast switching speed

Disadvantages: - Higher cost compared to traditional diode-based solutions - Requires careful thermal management due to high power dissipation

Working Principles

The SIHB21N60EF-GE3 operates based on the principles of field-effect transistors (FETs), where the gate voltage controls the flow of current between the source and drain terminals. By modulating the gate voltage, the device can efficiently regulate power flow in electronic circuits.

Detailed Application Field Plans

The SIHB21N60EF-GE3 finds extensive use in various applications, including: - Motor drives for electric vehicles and industrial machinery - Inverters for renewable energy systems - Power supplies for consumer electronics and industrial equipment

Detailed and Complete Alternative Models

• Alternative Model 1: SIHB20N60EF-GE3
• Alternative Model 2: SIHB22N60EF-GE3
• Alternative Model 3: SIHB25N60EF-GE3

In conclusion, the SIHB21N60EF-GE3 is a versatile power semiconductor device with high voltage and current handling capabilities, making it suitable for a wide range of power electronics applications. Its efficient power control, fast switching speed, and robust construction make it an ideal choice for modern electronic systems.

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