SIHF8N50D-E3
Product Overview
Category
The SIHF8N50D-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high voltage switching applications.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SIHF8N50D-E3 comes in a TO-220AB package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is typically available in reels with a quantity of 1000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 500V
- Continuous Drain Current (ID): 8A
- On-Resistance (RDS(on)): 1.15Ω
- Power Dissipation (PD): 125W
- Gate-Source Voltage (VGS): ±30V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SIHF8N50D-E3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power loss
- High voltage capability for versatile applications
- Fast switching speed for efficient operation
- Low gate charge for reduced drive requirements
Advantages and Disadvantages
Advantages
- High voltage capability makes it suitable for a wide range of applications
- Low on-resistance leads to improved efficiency
- Fast switching speed enhances performance
Disadvantages
- Higher gate capacitance compared to some alternative models
- May require careful consideration of gate drive circuitry due to high voltage rating
Working Principles
The SIHF8N50D-E3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and high voltage capability to control the flow of current in various electronic circuits.
Detailed Application Field Plans
The SIHF8N50D-E3 is well-suited for use in: - Switching power supplies - Motor control systems - High voltage DC-DC converters - Inverters for industrial and automotive applications
Detailed and Complete Alternative Models
Some alternative models to the SIHF8N50D-E3 include: - IRF840 - STP16NF06L - FQP27P06
In conclusion, the SIHF8N50D-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an essential component for efficient power management and control in various electronic systems.
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What is the maximum drain-source voltage of SIHF8N50D-E3?
- The maximum drain-source voltage of SIHF8N50D-E3 is 500V.
What is the continuous drain current rating of SIHF8N50D-E3?
- The continuous drain current rating of SIHF8N50D-E3 is 8A.
What is the on-state resistance (RDS(on)) of SIHF8N50D-E3?
- The on-state resistance (RDS(on)) of SIHF8N50D-E3 is typically 1.15 ohms.
What is the gate-source threshold voltage of SIHF8N50D-E3?
- The gate-source threshold voltage of SIHF8N50D-E3 is typically 2.5V.
What are the recommended operating temperature range for SIHF8N50D-E3?
- The recommended operating temperature range for SIHF8N50D-E3 is -55°C to 150°C.
Is SIHF8N50D-E3 suitable for high-frequency switching applications?
- Yes, SIHF8N50D-E3 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
Does SIHF8N50D-E3 require a heatsink for operation?
- It is recommended to use a heatsink for SIHF8N50D-E3 when operating at high currents or in high-temperature environments.
Can SIHF8N50D-E3 be used in automotive applications?
- Yes, SIHF8N50D-E3 is suitable for automotive applications due to its rugged construction and high voltage rating.
What are the typical applications for SIHF8N50D-E3 in technical solutions?
- Typical applications for SIHF8N50D-E3 include motor control, power supplies, inverters, and industrial equipment.
Is SIHF8N50D-E3 RoHS compliant?
- Yes, SIHF8N50D-E3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.