SIR496DP-T1-GE3

Introduction

The SIR496DP-T1-GE3 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High efficiency, low on-resistance, fast switching speed
• Package: DPAK (TO-252)
• Essence: Efficient power management
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

The SIR496DP-T1-GE3 features the following specifications: - Drain-Source Voltage (VDS): 30V - Continuous Drain Current (ID): 96A - RDS(ON) Max @ VGS = 10V: 1.5mΩ - Gate-Source Voltage (VGS) Max: ±20V - Total Gate Charge (Qg): 38nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SIR496DP-T1-GE3 has a standard DPAK (TO-252) package with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low on-resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• High current handling capability for power applications

Advantages and Disadvantages

Advantages

• High efficiency
• Low on-resistance
• Fast switching speed
• Reliable performance in power applications

Disadvantages

• Higher cost compared to traditional MOSFETs
• Sensitivity to static electricity

Working Principles

The SIR496DP-T1-GE3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The SIR496DP-T1-GE3 is commonly used in the following application fields: - Switching power supplies - Motor control - Battery management systems - LED lighting - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the SIR496DP-T1-GE3 include: - Infineon IPP096N03L G - Vishay SI7469DP-T1-GE3 - ON Semiconductor NTMFS4C029NT1G

In conclusion, the SIR496DP-T1-GE3 power MOSFET offers high performance and reliability in power switching applications, making it a popular choice among electronic designers and engineers.

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